AS4C512M16D4-75BIN

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AS4C512M16D4-75BIN

IC DRAM 8GBIT POD 96FBGA

  • Manufacturer
  • Mfr. Part #AS4C512M16D4-75BIN
  • Package
  • Datasheet
  • In Stock198

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Specifications

Part Status Obsolete
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR4
Memory Size 8Gbit
Memory Organization 512M x 16
Memory Interface POD
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.14V ~ 1.26V
Operating Temperature -40°C ~ 95°C (TC)
Mounting Type Surface Mount
Package / Case 96-TFBGA
Supplier Device Package 96-FBGA (7.5x13)
Base Product Number AS4C512
Clock Frequency 1.333 GHz
Access Time 18 ns

Overview

Description

The AS4C512M16D4-75BIN is a high-performance DRAM memory chip manufactured by Alliance Memory. It is a 512 Meg x 16-bit DDR3 SDRAM, designed for applications requiring fast data processing and storage. With a capacity of 512 Megabits (64 Megabytes), it features a 16-bit data interface, making it suitable for various computing environments, including consumer electronics and industrial applications.
This chip operates at a clock speed of 1333 MT/s (megatransfers per second) and has a low power specification, making it energy-efficient. The 75BIN designation indicates a maximum cycle time of 7.5 ns, optimizing performance during operation. It supports various features such as burst read/write operations and is compatible with standard DDR3 memory protocols.
Widely used in memory modules, graphics applications, and embedded systems, the AS4C512M16D4-75BIN offers reliable performance in a compact footprint. Its robust design ensures durability and longevity in demanding environments.

Features

The AS4C512M16D4-75BIN is a DDR3 SDRAM (Synchronous Dynamic Random Access Memory) component featuring a 512Mb (megabit) capacity. It is organized in a x16 bit configuration, making it suitable for various applications requiring high-speed memory access. Key features include:
1. Speed: Operates at a maximum data rate of 1600 MT/s (megatransfers per second).
2. Voltage: Typically powered at 1.5V, with support for a low-power mode of 1.35V.
3. Packaging: Available in a compact 78-ball FBGA (Fine Ball Grid Array) package.
4. Latency: Offers low latency for improved performance in data-intensive tasks.
5. Refresh: Supports standard refresh operations as per DDR3 specifications.
6. Compatibility: Designed to be compatible with a variety of devices, including computers and embedded systems.
These features make the AS4C512M16D4-75BIN suitable for applications in personal computers, servers, and other electronic devices requiring efficient and reliable memory performance.

Package

The AS4C512M16D4-75BIN is packaged in a standard 72-ball FBGA (Fine Ball Grid Array) format. This compact package type is commonly used for memory components, providing efficient thermal management and space-saving characteristics.

Pinout

The AS4C512M16D4-75BIN is a 4Gb (512M x 16) DDR3 SDRAM memory chip with a total of 78 pins. It operates with a supply voltage of 1.5V and supports data rates up to 1600 MT/s. The chip is organized as 512M x 16 bits and includes features such as a burst length of 8 and various power-saving modes.
The pins on this chip are used for data input/output, address input, command input, clock signals, and power supply connections. Key functions of the pins include:
- DQ (Data I/O Pins): For data transfer.
- A (Address Pins): To select memory locations.
- BA (Bank Address Pins): To select memory banks.
- CS (Chip Select): To enable/disable the chip.
- CK/CKE (Clock/CLOCK Enable): For synchronization and power management.
- RAS/CAS (Row/Column Address Strobe): For command signaling.
This configuration enables efficient and high-speed data processing suitable for various applications.

Manufacturer

The AS4C512M16D4-75BIN is manufactured by Alliance Memory, Inc. Alliance Memory is a semiconductor company that specializes in the design and manufacturing of memory products, including DRAM and SRAM. Founded in 2006 and headquartered in the United States, the company focuses on providing reliable memory solutions for various applications in the consumer electronics, automotive, industrial, and telecommunications sectors. Their product portfolio includes a range of memory types aimed at supporting legacy and current technologies, ensuring compatibility and availability for customers in different markets.

Application

The AS4C512M16D4-75BIN is a 512Mb DDR3 SDRAM memory chip commonly used in various applications, including computing devices, embedded systems, networking equipment, and telecommunications. It is suitable for memory-intensive tasks in servers, workstations, and consumer electronics, providing high-speed data processing and efficient memory management in applications requiring reliable performance.

Equivalent

The AS4C512M16D4-75BIN is a 512Mb DDR3 SDRAM chip. Equivalent products include:
1. MT41J512M16HA-15E (Micron)
2. H5TQ2G83AFR (Hynix)
3. K4B4G1646F (Samsung)
Ensure compatibility in specifications like speed, voltage, and package type when considering alternatives.

Shipping

Shipping MethodsWe

offer global shipping services through DHL, FedEx, TNT, UPS, or any other forwarder of your choice.


Shipping Fee Reference (DHL/FedEx):

DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.

FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.

UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.

TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.

EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.

Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.

Payments

Payment Methods

The Payment term is 100% Prepaid.

Currently, we only accept the below payment methods:

1. PayPal

2. Credit/ Debit Card

3. Wire Transfer

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