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BLF278
RF MOSFET 50V CDFM4
- Manufacturer
- Mfr. Part #BLF278
- Package
- Datasheet
- In Stock3954
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Specifications
| Part Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Common Source |
| Gain | 18dB |
| Voltage - Test | 50 V |
| Current Rating (Amps) | 2.5mA |
| Current - Test | 200 mA |
| Power - Output | 300W |
| Voltage - Rated | 125 V |
| Package | SOT-262A1 |
| Supplier Device Package | CDFM4 |
| Packaging | Bulk |
Overview
Description
Key specifications of BLF278 include a maximum drain-source voltage (Vds) of around 50V, a continuous drain current (Id) of up to 25A, and a low Rds(on) value, which minimizes power loss during operation. Its robust design enables it to perform well in demanding environments, making it a popular choice in both consumer and industrial electronics.
Overall, BLF278 is favored for its reliability and efficiency in managing high power levels in various electronic circuits.
Features
1. Power Output: Capable of delivering high output power, typically around 100W in linear mode.
2. Frequency Range: Operates efficiently across a wide frequency range, typically from 30 MHz to 600 MHz, making it suitable for various communication standards.
3. High Gain: Offers high power gain, which reduces the need for additional amplification stages.
4. Thermal Stability: Designed with good thermal management characteristics, allowing for reliable operation under high temperatures.
5. Durability: Built to withstand harsh operating conditions with robust packaging.
6. Class AB Operation: Suitable for Class AB amplifiers, providing an optimal balance between efficiency and linearity.
7. S-Parameters: Good S-parameters for easy matching to RF circuits.
These features make the BLF278 a popular choice in RF amplification for professional applications, including transmitters and linear amplifiers.
Package
Pinout
1. Gate (G) - Controls the transistor's switching and amplification.
2. Drain (D) - Connects to the high-voltage supply and is where the output RF signal is taken.
3. Source (S) - Common ground point for the device, connected to the RF circuit ground.
4. Gate (G) - Similar to Pin 1, it serves as a second gate connection for enhanced performance.
5. Drain (D) - A second drain connection for improved thermal management and performance.
6. Source (S) - A second source connection for better heat dissipation.
The transistor is designed for use in applications such as base stations and other high-frequency RF systems, providing high efficiency and linearity.
Manufacturer
Application
1. Broadcasting: FM and TV transmitters.
2. Telecommunications: Base stations for mobile networks.
3. Industrial RF systems: RF heating and plasma generation.
4. Aerospace and Defense: Radar systems and communication equipment.
5. Test Equipment: Signal generators and amplifiers.
Its high efficiency and linearity make it suitable for these demanding applications.
Equivalent
Shipping
Shipping MethodsWe
offer global shipping services through DHL, FedEx, TNT, UPS, or any other forwarder of your choice.
Shipping Fee Reference (DHL/FedEx):
DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.
FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.
UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.
TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.
EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.
Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.
Payments
Payment Methods
The Payment term is 100% Prepaid.
Currently, we only accept the below payment methods:
1. PayPal
2. Credit/ Debit Card
3. Wire Transfer
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