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C3M0075120D
SICFET N-CH 1200V 30A TO247-3
- Manufacturer
- Mfr. Part #C3M0075120D
- Package
- Datasheet
- In Stock274
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Specifications
| Series | C3M™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 20A, 15V |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 15 V |
| Vgs (Max) | +19V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 1000 V |
| Power Dissipation (Max) | 113.6W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Base Product Number | C3M0075120 |
Overview
Description
Features
1. Input Voltage Range: Typically supports a wide input voltage range, ensuring compatibility with various power sources.
2. Output Options: Provides multiple output voltages, allowing for flexible power supply configurations.
3. High Efficiency: Designed to minimize power loss, enhancing battery life in portable devices.
4. Low Quiescent Current: Reduces power consumption during standby, ideal for battery-powered applications.
5. Thermal Protection: Integrated thermal shutdown functionality prevents damage due to overheating.
6. Small Form Factor: Compact package size suitable for space-constrained designs.
7. Multiple Protection Features: Includes over-voltage, under-voltage, and short-circuit protection for enhanced reliability.
These features make the C3M0075120D suitable for applications like smartphones, tablets, and IoT devices, where efficient and reliable power management is critical.
Package
Pinout
- Voltage Rating: 1200V
- Current Rating: Up to 7.5A
- Low On-Resistance: Reduces conduction losses
The pin configuration typically includes:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): Connects to the load and receives the output current.
3. Source (S): Connects to the ground or negative side of the circuit.
4. Body Diode (integrated): Allows current to flow when the MOSFET is off, providing a path for inductive loads.
This device is widely used in applications like power supplies, inverters, and motor drives due to its excellent thermal performance and efficiency.
Manufacturer
Application
Equivalent
1. C3M0075120K (Cree)
2. SCT3060 (SCT)
3. STP12S120 (STMicroelectronics)
4. MPSM120 (MPS)
5. FGA25N120 (Fairchild)
Always check specific datasheets for exact specifications and compatibility.
Shipping
Shipping MethodsWe
offer global shipping services through DHL, FedEx, TNT, UPS, or any other forwarder of your choice.
Shipping Fee Reference (DHL/FedEx):
DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.
FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.
UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.
TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.
EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.
Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.
Payments
Payment Methods
The Payment term is 100% Prepaid.
Currently, we only accept the below payment methods:
1. PayPal
2. Credit/ Debit Card
3. Wire Transfer
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