CSD18537NQ5A

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CSD18537NQ5A

MOSFET N-CH 60V 50A 8VSON

  • Manufacturer
  • Mfr. Part #CSD18537NQ5A
  • Package PowerTDFN-8
  • Datasheet
  • In Stock3056

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Specifications

Package Tape & Reel (TR),Cut Tape (CT)
Series NexFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 50A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 13mOhm @ 12A, 10V
Vgs(th)(Max)@Id 3.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 18 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1480 pF @ 30 V
PowerDissipation(Max) 3.2W (Ta), 75W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-VSONP (5x6)

Overview

Description

CSD18537NQ5A is a specific part number for a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This device is designed for use in applications requiring efficient power management, such as DC-DC converters, power supplies, and motor drivers.
Key features of the CSD18537NQ5A include low on-resistance, high-speed switching capabilities, and a compact package design that facilitates thermal management and PCB layout. Its gate threshold voltage and maximum ratings make it suitable for a variety of voltage and current applications, enhancing system performance and reliability.
The device is often favored in consumer electronics, automotive, and industrial applications due to its efficiency and reliability. Engineers typically reference its datasheet for detailed electrical characteristics, thermal performance, and recommended operating conditions to ensure optimal integration into their designs.

Features

The CSD18537NQ5A is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 60V, making it suitable for medium voltage applications.
2. Current Rating: The device supports a continuous drain current of up to 60A, facilitating robust performance in high-current scenarios.
3. On-Resistance (Rds(on)): With a low on-resistance of around 2.5 mΩ at Vgs = 10V, it ensures efficient power consumption and minimal heat generation.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 1V to 2.5V, enabling it to be driven by low-voltage control signals.
5. Package Type: It comes in a TO-220 package, providing good thermal performance and ease of mounting.
6. Fast Switching Speed: This MOSFET is designed for quick switching, making it suitable for applications like DC-DC converters, motor drivers, and power supply circuits.
Overall, the CSD18537NQ5A is ideal for high-efficiency, high-current applications in power electronics.

Package

The CSD18537NQ5A is packaged in a 5x6 mm PowerBlock™ package, which is a compact, surface-mount type designed for high-efficiency power applications.

Pinout

The CSD18537NQ5A is a power MOSFET produced by Texas Instruments. It features a total of 8 pins. The primary functions of these pins include:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output connection where the load is connected.
3. Source (S) - The reference point for the drain and controls the flow of current.
The specific pin configuration follows the standard TO-220 package layout. The device is designed for applications such as power management and high-efficiency switching. It has low on-resistance and fast switching capabilities, making it suitable for various power conversion applications.
For exact pin assignments, refer to the manufacturer's datasheet for the CSD18537NQ5A.

Manufacturer

The CSD18537NQ5A is manufactured by Texas Instruments (TI), a leading global semiconductor company. Texas Instruments designs and produces a wide range of analog and embedded processing products. The company is known for its innovation in analog technology and digital signal processing, serving various markets including automotive, industrial, communications, and consumer electronics. Founded in 1930, TI is headquartered in Dallas, Texas, and has a strong reputation for reliability and performance in its semiconductor solutions, including power management, microcontrollers, and integrated circuits.

Application

The CSD18537NQ5A is a power MOSFET commonly used in applications such as DC-DC converters, power management systems, battery management, and motor drives. Its high efficiency and low on-resistance make it suitable for renewable energy systems, electric vehicles, and consumer electronics.

Equivalent

The CSD18537NQ5A is a MOSFET primarily used in power management applications. Equivalent products include the CSD18530Q5A, CSD18531Q5A, and CSD18536Q5A from Texas Instruments, as well as similar MOSFETs from other manufacturers such as the IRF series from Infineon or the NTM series from ON Semiconductor. Always check specifications for exact match in voltage, current, and RDS(on) ratings.

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