DMN2300UFB4-7B

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DMN2300UFB4-7B

MOSFET N-CH 20V 1.3A 3DFN

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Specifications

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 1.3A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 1.5V, 4.5V
RdsOn(Max)@IdVgs 175mOhm @ 300mA, 4.5V
Vgs(th)(Max)@Id 950mV @ 250µA
GateCharge(Qg)(Max)@Vgs 1.6 nC @ 4.5 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 64.3 pF @ 25 V
PowerDissipation(Max) 500mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage X2-DFN1006-3

Overview

Description

The DMN2300UFB4-7B is a dual N-channel MOSFET designed for various power management applications, including switching and amplification. It features a low R_DS(on), which minimizes conduction losses and enhances efficiency in circuits. The device typically operates at a maximum voltage of 30V and can handle continuous drain currents of up to 60A, making it suitable for high-power applications.
Its compact package allows for efficient thermal management, ensuring reliability in demanding environments. Additionally, the DMN2300UFB4-7B is characterized by fast switching speeds, reducing transition losses and improving the overall performance of power electronic circuits.
This MOSFET is commonly used in applications such as DC-DC converters, motor drives, and other systems requiring efficient power handling. Its ease of integration into existing designs makes it a popular choice among engineers. When selecting the DMN2300UFB4-7B, consider its thermal characteristics and gate drive requirements for optimal performance in your application.

Features

The DMN2300UFB4-7B is a dual N-channel MOSFET designed for power management and switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-to-source voltage (VDS) of 30V, allowing it to handle moderate power levels.
2. Current Rating: With a continuous drain current of 60A, it can manage significant load currents.
3. Low On-Resistance: It features a low RDS(on) of approximately 10 mΩ at VGS = 10V, which enhances efficiency by minimizing power loss.
4. Fast Switching Speed: This MOSFET offers fast switching capabilities, making it suitable for high-frequency applications.
5. Package Type: Housed in a TO-220 package, it provides effective thermal performance and is easy to mount on heatsinks.
6. Applications: Ideal for use in power supply circuits, motor drives, and other applications requiring efficient switching.
Overall, the DMN2300UFB4-7B is optimized for high-performance applications, ensuring reliability and efficiency.

Package

The DMN2300UFB4-7B is packaged in a DPAK (or TO-252) type package. This surface-mount package features three leads and is commonly used for power MOSFETs, providing good thermal performance and ease of handling in circuit designs.

Pinout

The DMN2300UFB4-7B is a N-channel MOSFET from ON Semiconductor. It has a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET and turn it on or off. Applying a voltage to this pin allows current to flow from the drain to the source.
2. Drain (D) - This pin is connected to the load. Current flows out of the drain when the MOSFET is in the 'on' state.
3. Source (S) - This pin is connected to ground or the lower potential side of the circuit. It is where the current enters when the MOSFET is conducting.
4. Drain (D) - The dual pin configuration indicates that there are two drain pins for improved thermal performance and current handling.
The DMN2300UFB4-7B is typically used in applications such as power management, switching, and amplifying signals in various electronic circuits.

Manufacturer

The DMN2300UFB4-7B is manufactured by Nexperia, a company that specializes in the production of discrete, logic, and MOSFET semiconductor devices. Nexperia was formed as a spin-off from NXP Semiconductors and focuses on delivering high-quality, high-volume semiconductor solutions. The company is known for its expertise in manufacturing various electronic components used in automotive, industrial, and consumer applications, providing products that support efficient power management and signal processing in electronic circuits.

Application

The DMN2300UFB4-7B is a N-channel MOSFET primarily used in various applications such as power management, switching converters, motor control, and LED drivers. Its low on-resistance and fast switching capabilities make it suitable for use in automotive, industrial, and consumer electronics, particularly in efficient power supply designs and battery management systems.

Equivalent

The DMN2300UFB4-7B is a N-channel MOSFET. Equivalent products include the BSS138, SI2300, and FDN337N. Ensure to check specifications like voltage, current ratings, and RDS(on) for compatibility in your specific application.

Shipping

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Shipping Fee Reference (DHL/FedEx):

DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.

FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.

UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.

TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.

EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.

Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.

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