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DMN6068SE-13
MOSFET N-CH 60V 4.1A SOT223
- Manufacturer
- Mfr. Part #DMN6068SE-13
- Package TO-261-4,TO-261AA
- Datasheet DMN6068SE-13 DataSheet
- In Stock7688
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Specifications
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 4.1A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 68mOhm @ 12A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 10.3 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 502 pF @ 30 V |
| PowerDissipation(Max) | 2W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-223-3 |
Overview
Description
Key specifications include a low gate threshold voltage, fast switching speeds, and a robust thermal performance, enabling it to handle high currents with minimal heat generation. The compact package design allows for easy integration into circuit boards.
Overall, DMN6068SE-13 offers reliability and efficiency for modern electronic designs, helping to optimize performance in energy-sensitive applications.
Features
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium-voltage applications.
2. Current Rating: It can handle continuous drain currents of up to 65A, providing robust performance for high-load conditions.
3. R_DS(on): The on-resistance is low, around 0.022Ω, which minimizes conduction losses and enhances efficiency.
4. Package: It is housed in a compact SO-8 package that supports efficient thermal dissipation, allowing for reliable operation in confined spaces.
5. Fast Switching: The device exhibits fast switching capabilities, making it ideal for high-frequency applications.
6. Gate-Source Voltage: It has a maximum gate-source voltage (V_GS) rating of ±20V, providing flexibility in gate drive designs.
These features make the DMN6068SE-13 suitable for applications in power supplies, motor drivers, and other electronic circuits requiring efficient power management.
Package
Pinout
1. Gate (G): Controls the MOSFET operation.
2. Drain (D): The terminal through which the current flows out when the device is on.
3. Source (S): The terminal through which the current enters when the device is on.
4. Body (B): The substrate of the device, typically connected to the source in N-channel MOSFETs.
This device is commonly used in power management applications, including load switching and as a switch in power supply circuits. The DMN6068SE-13 is known for its low on-resistance and high-speed switching capabilities, making it suitable for various electronic applications.
Manufacturer
Application
Equivalent
Shipping
Shipping MethodsWe
offer global shipping services through DHL, FedEx, TNT, UPS, or any other forwarder of your choice.
Shipping Fee Reference (DHL/FedEx):
DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.
FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.
UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.
TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.
EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.
Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.
Payments
Payment Methods
The Payment term is 100% Prepaid.
Currently, we only accept the below payment methods:
1. PayPal
2. Credit/ Debit Card
3. Wire Transfer
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