FDB14N30TM

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FDB14N30TM

MOSFET N-CH 300V 14A D2PAK

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Specifications

Package Tape & Reel (TR),Cut Tape (CT)
Series UniFET™
ProductStatus Last Time Buy
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 300 V
Current-ContinuousDrain(Id)@25°C 14A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 290mOhm @ 7A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 25 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1060 pF @ 25 V
PowerDissipation(Max) 140W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D²PAK (TO-263)

Overview

Description

FDB14N30TM is a high-performance N-channel MOSFET designed for various applications, including power management, switching, and amplification. It features a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) rating of 14A, making it suitable for medium power applications. The device is characterized by low on-resistance (R_DS(on)), which enhances its efficiency by minimizing power loss during operation.
Typically housed in a TO-220 package, the FDB14N30TM allows for effective heat dissipation, essential for maintaining performance under load. Its fast switching capabilities make it ideal for use in power supplies, motor drivers, and other electronic circuits requiring rapid response times.
Additionally, the device is often utilized in switching regulators and inverters, contributing to energy efficiency in various electronic systems. Overall, the FDB14N30TM is a reliable choice for engineers seeking robust performance in compact designs.

Features

The FDB14N30TM is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 30V, suitable for low-voltage applications.
2. Current Rating: Continuous drain current (I_D) of 14A, allowing for substantial load handling.
3. R_DS(on): Low on-resistance (typically around 0.1 ohm), which reduces power losses during operation.
4. Gate Threshold Voltage (V_GS(th)): Low threshold voltage range, enabling efficient switching at lower gate drive voltages.
5. Package: Available in a TO-220 package, offering good thermal performance for heat dissipation.
6. Fast Switching: Optimized for high-speed switching applications, making it suitable for use in power supplies and motor drives.
7. Thermal Resistance: Low thermal resistance contributes to better heat management.
These features make the FDB14N30TM ideal for a variety of applications, including DC-DC converters, power management systems, and automotive electronics.

Package

The FDB14N30TM is packaged in a TO-220 casing. This type of package is commonly used for power devices, providing good thermal performance and electrical insulation.

Pinout

The FDB14N30TM is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications like switching and power management. It has a total of 5 pins. The pin functions are as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output terminal where the current flows out when the device is on.
3. Source (S) - The terminal where the current enters the device when it is on.
4. Tab (T) - Typically connected to the Drain and used for heat dissipation.
5. Body Diode - Implicitly present, allowing current to flow in the reverse direction.
This configuration allows the FDB14N30TM to efficiently control high power levels in various electronic applications.

Manufacturer

The FDB14N30TM is a power MOSFET manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor Corporation. Fairchild Semiconductor was known for its expertise in analog and mixed-signal semiconductors, serving various industries including automotive, consumer electronics, industrial, and telecommunications. The company focused on providing a wide range of components such as transistors, diodes, and integrated circuits, contributing to the advancement of electronic technologies. After its acquisition by ON Semiconductor in 2016, the brand and its products continued to be integrated into ON Semiconductor’s extensive portfolio, which emphasizes energy-efficient and performance-driven solutions for a diverse array of applications.

Application

The FDB14N30TM is a high-voltage MOSFET primarily used in power electronics applications such as switch-mode power supplies, DC-DC converters, and motor drives. It is suitable for energy-efficient designs in consumer electronics, industrial equipment, and renewable energy systems like solar inverters. Additionally, it finds use in automotive applications for electric vehicles and power management systems.

Equivalent

The FDB14N30TM is an N-channel MOSFET with a 30V rating and a 14A current capability. Equivalent products include the IRF3205, STP16NF06, and FDS6924. Always check the datasheets for specific parameters like R_DS(on), gate threshold voltage, and package type to ensure compatibility for your application.

Shipping

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Shipping Fee Reference (DHL/FedEx):

DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.

FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.

UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.

TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.

EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.

Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.

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