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FDMS86263P
MOSFET P-CH 150V 4.4A/22A 8PQFN
- Manufacturer
- Mfr. Part #FDMS86263P
- Package PowerTDFN-8
- Datasheet
- In Stock3840
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Specifications
| Package | Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 150 V |
| Current-ContinuousDrain(Id)@25°C | 4.4A (Ta), 22A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 53mOhm @ 4.4A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 63 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 3905 pF @ 75 V |
| PowerDissipation(Max) | 2.5W (Ta), 104W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-PQFN (5x6) |
Overview
Description
The package often used for the FDMS86263P is a DPAK or TO-220, providing good thermal dissipation properties. Its low gate charge minimizes switching losses, enhancing overall efficiency in power electronics applications. The MOSFET is suitable for various applications, including automotive, industrial, and consumer electronics, where reliable and efficient power management is critical.
In summary, the FDMS86263P is a robust, efficient MOSFET ideal for applications requiring high current handling and low power loss.
Features
1. Low On-Resistance (RDS(on)): This minimizes power loss and heat generation, enhancing efficiency.
2. High-Speed Switching: Suitable for fast switching applications, improving overall system responsiveness.
3. Wide Voltage Range: Operates effectively across a broad range of voltages, providing versatility in design.
4. Thermal Stability: Designed to handle high temperatures, ensuring reliable performance in demanding environments.
5. Low Gate Charge (Qg): Reduces power consumption during switching, optimizing energy efficiency.
6. Compact Package: Available in a small footprint, facilitating space-saving designs in PCB layouts.
7. High Current Handling: Capable of managing significant current loads, making it ideal for high-power applications.
These features make the FDMS86263P a suitable choice for modern electronic devices requiring efficient power management.
Package
Pinout
The functions of the pins are as follows:
1. Gate 1 (G1) - Controls the operation of the first N-channel MOSFET.
2. Drain 1 (D1) - The drain terminal for the first N-channel MOSFET.
3. Source 1 (S1) - The source terminal for the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the operation of the second N-channel MOSFET.
5. Drain 2 (D2) - The drain terminal for the second N-channel MOSFET.
6. Source 2 (S2) - The source terminal for the second N-channel MOSFET.
7. Common Source or Ground (GND) - Used for grounding or common connection.
8. Unused Pin (NC) - Not connected, typically for internal use.
This MOSFET is commonly used in power management applications, where efficient switching and low on-resistance are required.
Manufacturer
Application
Equivalent
Shipping
Shipping MethodsWe
offer global shipping services through DHL, FedEx, TNT, UPS, or any other forwarder of your choice.
Shipping Fee Reference (DHL/FedEx):
DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.
FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.
UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.
TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.
EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.
Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.
Payments
Payment Methods
The Payment term is 100% Prepaid.
Currently, we only accept the below payment methods:
1. PayPal
2. Credit/ Debit Card
3. Wire Transfer
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