IHW30N160R2

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IHW30N160R2

IGBTs RC-IGBT MONO DIODE 1600V 30A

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Specifications

Packaging Tube
Standard Pack Qty 240

Overview

Description

The IHW30N160R2 is a high-performance N-channel MOSFET designed for advanced power applications, particularly in industrial and automotive sectors. It features a maximum drain-source voltage (V_DS) of 160V and a continuous drain current (I_D) of 30A, making it suitable for high-voltage and high-current switching applications.
Key attributes include low on-resistance, which minimizes conduction losses and improves efficiency. Its fast switching capabilities facilitate high-frequency operations, making it ideal for use in power supplies, motor drives, and inverters. The device typically comes in a TO-220 package, which aids in effective thermal management.
Additionally, the IHW30N160R2 is designed for robustness, with a high level of avalanche rating and a wide operating temperature range, ensuring reliable performance under various conditions. Overall, this MOSFET is an excellent choice for engineers seeking efficient and reliable solutions in power electronic designs.

Features

The IHW30N160R2 is an N-channel power MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (Vds) of 160V, making it suitable for high-voltage circuits.
2. Current Rating: Capable of handling continuous drain current (Id) up to 30A, allowing for efficient power management in various applications.
3. Low On-Resistance: It exhibits a low Rds(on) value, typically around 0.15Ω, which minimizes power loss during operation and improves efficiency.
4. Fast Switching Speed: The device is optimized for fast switching, making it ideal for applications such as switch-mode power supplies and inverters.
5. Thermal Performance: Designed with a TO-220 package, it provides good thermal dissipation, aiding in reliable operation under high loads.
6. Robustness: Features include a high avalanche rating, ensuring reliability in harsh conditions.
These characteristics make the IHW30N160R2 suitable for automotive, industrial, and renewable energy applications.

Package

The IHW30N160R2 is typically packaged in a TO-247 format. This package type is designed for high-power applications, providing efficient heat dissipation and robust performance.

Pinout

The IHW30N160R2 is an N-channel IGBT (Insulated Gate Bipolar Transistor) designed for high-voltage applications. It typically comes in a TO-247 package, which has three pins.
Pin Count and Functions:
1. Gate (G) - Controls the switching of the transistor. A positive voltage applied to the gate turns the IGBT on.
2. Collector (C) - The main terminal through which the load current flows when the device is on. It connects to the positive voltage supply.
3. Emitter (E) - The terminal that connects to ground or the negative side of the circuit. It allows current to flow out of the IGBT when activated.
This IGBT is rated for a maximum collector-emitter voltage of 1600V and a continuous collector current of 30A, making it suitable for applications like motor drives and power inverters.

Manufacturer

The IHW30N160R2 is manufactured by Infineon Technologies AG, a German multinational company. Infineon specializes in semiconductor solutions and is known for its wide range of products, including power semiconductors, microcontrollers, and sensors. The company serves various sectors, including automotive, industrial, and consumer electronics. Infineon is recognized for its focus on innovation and sustainability, providing technologies that enhance energy efficiency and connectivity in electronic applications.

Application

The IHW30N160R2 is an IGBT (Insulated Gate Bipolar Transistor) designed for high-power applications. Its primary application areas include induction heating, motor drives, renewable energy systems (like solar inverters), industrial equipment, and power supplies. It is suitable for applications requiring high voltage and current handling, efficient switching, and thermal performance.

Equivalent

The IHW30N160R2 is an IGBT (Insulated Gate Bipolar Transistor) commonly used in power applications. Equivalent products include the Infineon IGBT series, such as the IHW30N160 and the IGBT from other manufacturers like Mitsubishi's CM600HA-24F or the ON Semiconductor MDU150A. Always check datasheets for specific ratings and characteristics to ensure compatibility.

Shipping

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Shipping Fee Reference (DHL/FedEx):

DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.

FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.

UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.

TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.

EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.

Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.

Payments

Payment Methods

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