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IKQ75N120CH3
IGBTs INDUSTRY 14
- Manufacturer
- Mfr. Part #IKQ75N120CH3
- Package
- Datasheet IKQ75N120CH3 DataSheet
- In Stock13570
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Specifications
| Packaging | Tube |
Overview
Description
This MOSFET is typically constructed using advanced silicon technology, ensuring high reliability and thermal stability. It comes in a TO-247 package, which facilitates effective heat dissipation, allowing for better performance in high-power applications.
Key specifications include a typical gate threshold voltage (V_GS(th)) and fast switching speeds, making it ideal for applications requiring rapid on/off transitions. The IKQ75N120CH3 is often favored for its efficiency and robustness in demanding environments.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 1200V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of 75A, it is suitable for demanding power management tasks.
3. Low On-Resistance: With a low R_DS(on), it minimizes conduction losses, enhancing efficiency in power conversion and switching applications.
4. Fast Switching Speed: The device is optimized for fast switching, which is crucial for high-frequency applications, reducing turn-on and turn-off delays.
5. Thermal Performance: It features a high thermal conductivity package, allowing effective heat dissipation and reliability in operation.
6. Package Type: Typically available in TO-220 or similar packages for easy mounting and heat sinking.
These features make the IKQ75N120CH3 ideal for use in applications such as switch-mode power supplies, inverters, and motor drives.
Package
Pinout
The functions of the pins are as follows:
1. Gate (G) - Controls the on/off state of the IGBT.
2. Collector (C) - The main terminal for the output current, connected to the load.
3. Emitter (E) - Provides a return path for current, connected to the negative side of the circuit.
4. Auxiliary Collector (C) - Used for providing feedback or sensing current.
5. Emitter (E) - A second emitter pin for improved thermal performance.
6. Gate-Emitter (G-E) - Often includes a diode for protection against voltage spikes.
This IGBT is suitable for applications like motor drives, inverters, and power converters due to its ability to handle high voltage and current levels efficiently.
Manufacturer
Application
Equivalent
Shipping
Shipping MethodsWe
offer global shipping services through DHL, FedEx, TNT, UPS, or any other forwarder of your choice.
Shipping Fee Reference (DHL/FedEx):
DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.
FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.
UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.
TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.
EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.
Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.
Payments
Payment Methods
The Payment term is 100% Prepaid.
Currently, we only accept the below payment methods:
1. PayPal
2. Credit/ Debit Card
3. Wire Transfer
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