IKW50N65EH5

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IKW50N65EH5

IGBTs INDUSTRY 14

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Specifications

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Overview

Description

The IKW50N65EH5 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications, including power conversion and switching. It features a voltage rating of 650V and a maximum continuous drain current of 50A, making it suitable for high-voltage and high-current operations.
Key attributes include low on-resistance (R_DS(on)), which minimizes conduction losses, and fast switching speeds, enhancing efficiency in power electronics. The device is optimized for applications such as power supplies, motor drives, and renewable energy systems.
The IKW50N65EH5 is housed in a TO-247 package, facilitating effective heat dissipation and easy integration into circuit designs. Its robust construction and thermal performance make it a reliable choice for demanding environments. Overall, the IKW50N65EH5 is ideal for engineers seeking efficiency and reliability in high-voltage applications.

Features

The IKW50N65EH5 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 650V, making it suitable for high-voltage environments.
2. Current Rating: It can handle continuous drain current (Id) up to 50A at 25°C.
3. On-Resistance: The MOSFET exhibits low on-resistance (Rds(on)) typically around 0.5 ohms, which minimizes power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 2 to 4V, ensuring efficient switching.
5. Fast Switching Speed: The device supports high-speed switching, beneficial for applications like power converters and motor drives.
6. Package Type: It comes in a TO-247 package, allowing for effective thermal performance and ease of mounting.
7. Applications: Ideal for use in industrial power supplies, UPS systems, and various high-voltage switching applications.
Overall, the IKW50N65EH5 is designed for reliability and efficiency in demanding electrical environments.

Package

The IKW50N65EH5 is packaged in a TO-247 format, which is a plastic package commonly used for power MOSFETs. This package type is designed for efficient heat dissipation and allows for easy mounting on heat sinks for high-power applications.

Pinout

The IKW50N65EH5 is a high-voltage N-channel MOSFET from Infineon Technologies. It features a total of 6 pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET's switching operation. A voltage applied here turns the device on or off.
2. Drain (D) - This is the pin through which the current flows out of the MOSFET when it is in the on-state.
3. Source (S) - This pin acts as the current input for the MOSFET. It is typically connected to ground in common-source configurations.
The IKW50N65EH5 is designed for high-performance applications, featuring low on-resistance and fast switching capabilities, making it suitable for power electronics, converters, and motor control systems.

Manufacturer

The IKW50N65EH5 is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that specializes in producing a wide range of semiconductor products, including power semiconductors, microcontrollers, and sensors. The company is known for its innovations in power management, automotive electronics, and security technologies. Infineon serves various industries such as automotive, industrial, and consumer electronics, focusing on energy efficiency and performance. Founded in 1999 as a spin-off from Siemens AG, Infineon has become a key player in the semiconductor market, with a strong emphasis on sustainability and technology advancement.

Application

The IKW50N65EH5 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) primarily used in applications such as motor drives, industrial converters, renewable energy systems (like solar inverters), and power supplies. Its high efficiency and fast switching capabilities make it suitable for medium to high power applications, including electric vehicles and uninterruptible power supplies (UPS).

Equivalent

The IKW50N65EH5 is an IGBT (Insulated Gate Bipolar Transistor) from Infineon. Equivalent products include the IGBT series from various manufacturers, such as:
1. FGA50N65 from ON Semiconductor
2. IRG4PC50UD from Infineon
3. MG50J6ES from Mitsubishi
4. SGT50N65 from STMicroelectronics
Always check specifications such as voltage, current rating, and thermal performance for compatibility.

Shipping

Shipping MethodsWe

offer global shipping services through DHL, FedEx, TNT, UPS, or any other forwarder of your choice.


Shipping Fee Reference (DHL/FedEx):

DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.

FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.

UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.

TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.

EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.

Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.

Payments

Payment Methods

The Payment term is 100% Prepaid.

Currently, we only accept the below payment methods:

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2. Credit/ Debit Card

3. Wire Transfer

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