IPA50R190CE

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IPA50R190CE

MOSFET N-CH 500V 18.5A TO220-FP

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  • Mfr. Part #IPA50R190CE
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  • Datasheet
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Specifications

Series CoolMOS™
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 18.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V
Rds On (Max) @ Id, Vgs 190mOhm @ 6.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 510µA
Gate Charge (Qg) (Max) @ Vgs 47.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1137 pF @ 100 V
Power Dissipation (Max) 32W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package / Case TO-220-3 Full Pack
Base Product Number IPA50R

Overview

Description

The IPA50R190CE is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is specifically designed for high-efficiency power conversion applications. This MOSFET belongs to the CoolMOS™ CE series, which is known for its cost-effective solutions while maintaining performance standards.
Key features of the IPA50R190CE include a maximum drain-source voltage (V_ds) of 500V and a low on-resistance (R_ds(on)) of approximately 190 milliohms, which contributes to reduced power losses and improved efficiency. The device is typically used in applications such as power supplies, adapters, and other power conversion systems requiring high switching speed and efficiency.
The CoolMOS™ CE series is often chosen for its balance between cost and performance, making the IPA50R190CE a suitable choice for both consumer and industrial applications where budget constraints exist, yet reliable performance is necessary. Its compact design and thermal performance make it adaptable for various electronic designs and configurations.

Features

The IPA50R190CE is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) part of the CoolMOS™ CE series from Infineon Technologies. It is designed for applications requiring high efficiency and reliability. Key features of the IPA50R190CE include:
1. Voltage Rating: It is rated for a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is approximately 13.4A, allowing it to handle moderate power loads.
3. R_DS(on): The on-state resistance is around 190 mΩ, contributing to low conduction losses and high efficiency.
4. Technology: Utilizes Infineon's advanced CoolMOS™ technology, providing superior switching performance and energy efficiency.
5. Thermal Performance: It features good thermal characteristics, which help in maintaining stability under high-temperature conditions.
6. Package: Typically available in a TO-220 package, which facilitates easy mounting and heat dissipation.
7. Applications: Ideal for use in applications such as switch-mode power supplies (SMPS), power factor correction (PFC), and lighting.
These features make the IPA50R190CE a cost-effective solution for various power electronic applications requiring efficiency and durability.

Package

The IPA50R190CE is a power MOSFET packaged in a TO-220 FullPAK. This package type is designed to provide efficient thermal management and electrical performance, commonly used in power supply and motor control applications.

Pinout

The IPA50R190CE is a power MOSFET from Infineon's CoolMOS™ CE series. It is designed for high-efficiency power conversion applications, often used in switch-mode power supplies. This component typically comes in a TO-220 package, which is a standard through-hole package used for many power semiconductors.
The TO-220 package for the IPA50R190CE generally has three pins, which serve the following functions:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate relative to the source turns the MOSFET on or off.
2. Drain (D): This pin is connected to the load and is where the main current flows when the MOSFET is on.
3. Source (S): This pin is connected to the ground or return path of the circuit.
These pins work together within the device to regulate electrical power efficiently in various applications.

Manufacturer

The IPA50R190CE is manufactured by Infineon Technologies. Infineon is a German semiconductor company that develops and manufactures a wide range of semiconductor solutions, including microcontrollers, power electronics, and security ICs. Their products are used in various applications, including automotive, industrial power control, and digital security solutions.

Application

The IPA50R190CE is a power MOSFET designed for use in a variety of high-efficiency applications. Key areas include switch-mode power supplies (SMPS), particularly in computers and servers, UPS systems, solar inverters, and industrial power supplies. Its low conduction and switching losses make it suitable for energy-efficient designs. Additionally, it's utilized in high-frequency converters and adapters due to its robust thermal performance and fast switching capabilities.

Equivalent

The IPA50R190CE is a power MOSFET from Infineon's CoolMOS CE series. Equivalent products might include:
1. STMicroelectronics' STP8NM50N, which is a 500V, N-channel MOSFET.
2. Vishay's IRFP460A, another 500V, N-channel MOSFET.
3. ON Semiconductor's FDPF5N50NZ, also a 500V, N-channel MOSFET.
Ensure to check the datasheets for exact matching characteristics such as Rds(on), gate charge, and package type to confirm equivalency.

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