IPB017N08N5

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IPB017N08N5

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  • Mfr. Part #IPB017N08N5
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  • Datasheet
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Specifications

Technology Si
Packaging Reel
Brand Infineon Technologies
Product Type MOSFETs
Series OptiMOS 5
Factory Pack Quantity:Factory Pack Quantity 1000
Subcategory Transistors
Part # Aliases SP001132472 IPB017N08N5ATMA1
Mounting Style SMD/SMT
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Height 4.4 mm
Length 10 mm
Width 9.25 mm
Unit Weight 0.139332 oz
Package / Case D2PAK-3 (TO-263-3)
Configuration Single
Tradename OptiMOS
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 120 A
Rds On - Drain-Source Resistance 1.5 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.2 V
Qg - Gate Charge 223 nC
Pd - Power Dissipation 375 W
Channel Mode Enhancement
Fall Time 37 ns
Rise Time 36 ns
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 102 ns
Typical Turn-On Delay Time 40 ns
REACH - SVHC Details
Forward Transconductance - Min 114 S

Overview

Description

IPB017N08N5 is a specific model of an IGBT (Insulated Gate Bipolar Transistor) produced by Infineon Technologies. It features a voltage rating of 800V and a current rating of 17A, making it suitable for high-efficiency applications such as motor drives, power converters, and renewable energy systems. The device combines the advantages of both MOSFETs (fast switching) and BJTs (high current capacity), providing excellent performance in terms of power loss and thermal management.
The "N" in the part number indicates that it is designed with a non-punch-through structure, enhancing its robustness and reliability under high voltage conditions. The IPB017N08N5 is often used in industrial applications, including inverters, and various energy management systems due to its high switching speeds and ruggedness. Its compact package design aids in space-saving PCB layouts, further enhancing its applicability in modern electronic designs.
Overall, the IPB017N08N5 is a versatile component well-suited for a range of demanding power electronics applications.

Features

The IPB017N08N5 is a power MOSFET from Infineon's CoolMOS™ series, designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
2. On-Resistance (R_DS(on)): Low on-resistance, typically around 0.17 ohms, ensuring minimal conduction losses.
3. High-Speed Switching: Optimized for fast switching, which contributes to improved system efficiency and reduced electromagnetic interference (EMI).
4. Thermal Performance: Enhanced thermal management capabilities, allowing for better performance in high-temperature environments.
5. Package Type: Available in a TO-220 package, facilitating easy mounting and heat dissipation.
6. Applications: Ideal for use in power supplies, motor drives, and other power conversion systems.
These features make the IPB017N08N5 an excellent choice for designers seeking reliability and efficiency in power electronics.

Package

The IPB017N08N5 is typically available in a TO-220 package type. This package design features a metal tab for heat dissipation, allowing for efficient thermal management in power applications.

Pinout

The IPB017N08N5 is an N-channel MOSFET from Infineon Technologies, designed for power applications. It features a pin count of 3. The pins are typically configured as follows:
1. Gate (G): This pin controls the MOSFET's switching operation. A voltage applied here allows the device to conduct.
2. Drain (D): The drain pin is where the load connects; current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to ground or the negative side of the circuit, allowing current to flow from the drain through the MOSFET to the source.
The IPB017N08N5 is known for its low on-resistance and high efficiency, making it suitable for applications such as power supplies, converters, and motor drivers.

Manufacturer

The IPB017N08N5 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensor systems, and automotive electronics. The company serves various industries, such as automotive, industrial, and consumer electronics, focusing on energy efficiency, mobility, and security. Infineon is known for its innovation in power management and control technologies, contributing to advancements in energy-efficient solutions and smart systems.

Application

The IPB017N08N5 is a N-channel MOSFET primarily used in power management applications. Key areas include automotive systems, DC-DC converters, switch-mode power supplies, and motor control. It is suitable for high-efficiency designs in renewable energy systems, electric vehicles, and industrial applications due to its low on-resistance and high switching speed.

Equivalent

The IPB017N08N5 is a N-channel MOSFET with a maximum drain-source voltage of 80V and a continuous drain current of 17A. Equivalent products include the STP17NM60, IRF3205, and BSS138. Always verify specifications like RDS(on), gate threshold voltage, and package type before replacement.

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