IR2101PBF

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IR2101PBF

IC GATE DRVR HALF-BRIDGE 8DIP

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Specifications

Package Bulk,Tube
ProductStatus Active
DrivenConfiguration Half-Bridge
ChannelType Independent
NumberofDrivers 2
GateType IGBT, N-Channel MOSFET
Voltage-Supply 10V ~ 20V
LogicVoltage-VILVIH 0.8V, 3V
Current-PeakOutput(SourceSink) 210mA, 360mA
InputType Non-Inverting
HighSideVoltage-Max(Bootstrap) 600 V
Rise/FallTime(Typ) 100ns, 50ns
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case 8-DIP (0.300, 7.62mm)

Overview

Description

"Introduction to IR2101PBF" typically refers to a foundational course in International Relations (IR). While course specifics can vary by institution, such a class usually covers the basic theories, concepts, and frameworks essential for understanding global politics.
Key topics often include the examination of international systems, state behavior, non-state actors, and the causes of war and peace. The course might explore various IR theories, such as realism, liberalism, and constructivism, providing students with tools to analyze current global events.
Additionally, this introductory class may address the roles of international organizations, the impact of globalization, international law, and human rights. Students are encouraged to think critically about how historical and contemporary issues shape international dynamics.
For precise details on IR2101PBF, including prerequisites and specific syllabus content, one would need to consult the course catalog or departmental resources at the institution offering the course.

Features

The IR2101PBF is a high-voltage, high-speed power MOSFET and IGBT driver. It is designed to drive gate voltages in half-bridge configurations, often used in motor drives, power supplies, and inverters. Key features include:
1. High Voltage: Operates with an output driver capability up to 600V.
2. High-Speed: Capable of fast switching to improve efficiency.
3. Floating Channel: Can be used to drive high-side MOSFETs or IGBTs, supporting bootstrap operation.
4. Under-Voltage Lockout (UVLO): Protects the gate control circuit by ensuring that the output drivers are only activated when sufficient supply voltage is present.
5. Logic Inputs: Compatible with standard CMOS or LSTTL outputs.
6. Bootstrap Diode: Includes a bootstrap diode for simplified design and reduced external component count.
7. Cross-Conduction Prevention Logic: Prevents simultaneous conduction of high-side and low-side devices.
8. Compact Package: Available in 8-lead DIP or SOIC packages, helping to save board space.
These features make the IR2101PBF suitable for efficient and reliable control of power devices in various applications.

Package

The IR2101PBF is an integrated circuit from Infineon Technologies, packaged in an 8-pin DIP (Dual In-line Package) format. This package type is suitable for through-hole mounting on printed circuit boards (PCBs), facilitating easy handling and installation.

Pinout

The IR2101PBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is typically used for driving half-bridge circuits. The IR2101PBF comes in an 8-pin package.
Here is a brief overview of the pin functions:
1. VCC: Supply voltage for the logic circuitry.
2. V: Logic input for high-side driver.
3. HIN: Logic input for high-side driver.
4. LIN: Logic input for low-side driver.
5. COM: Common ground reference for the logic inputs.
6. LO: Low-side gate drive output.
7. VS: High-voltage floating supply return.
8. HO: High-side gate drive output.
The IR2101PBF can drive high and low-side MOSFETs and IGBTs efficiently by providing appropriate gate voltages. Its ability to operate at high frequencies and handle high voltages makes it suitable for use in a variety of applications, including motor drive circuits, SMPS, and inverter circuits.

Manufacturer

The IR2101PBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that focuses on various electronic components and systems. They produce a wide range of products, including power semiconductors, sensors, microcontrollers, and security ICs, catering to industries such as automotive, industrial, and consumer electronics. The company is known for its innovations in energy efficiency, mobility, and security technologies.

Application

The IR2101PBF is a high-voltage, high-speed power MOSFET and IGBT driver. It is commonly used in applications such as motor drives, power supplies, and DC-DC converters. This driver is suitable for systems requiring high efficiency and reliability, such as automotive electronics, industrial automation, and renewable energy systems. Its ability to drive both low-side and high-side transistors makes it versatile for various power management and control tasks.

Equivalent

Equivalent products for the IR2101PBF, which is a high voltage, high-speed power MOSFET and IGBT driver, include the following chips: IR2104, IR2110, FAN7390, and UCC27324. These alternatives provide similar functionalities such as high-side and low-side gate driving, under-voltage lockout protection, and are used in motor control, power supplies, and other applications requiring fast switching. Ensure compatibility with your specific application requirements before substitution.

Shipping

Shipping MethodsWe

offer global shipping services through DHL, FedEx, TNT, UPS, or any other forwarder of your choice.


Shipping Fee Reference (DHL/FedEx):

DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.

FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.

UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.

TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.

EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.

Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.

Payments

Payment Methods

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