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IRF640NSPBF
MOSFET N-CH 200V 18A D2PAK
- Manufacturer
- Mfr. Part #IRF640NSPBF
- Package
- Datasheet IRF640NSPBF DataSheet
- In Stock24525
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Specifications
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package | Tube,Tube |
| Series | HEXFET® |
| ProductStatus | Discontinued at Digi-Key |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 18A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 150mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 67 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1160 pF @ 25 V |
| PowerDissipation(Max) | 150W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
Overview
Description
Key characteristics of the IRF640NSPBF include a low on-resistance (R_DS(on)), typically around 0.36 ohms at V_GS of 10 V, which helps reduce power loss during operation. The device is housed in a TO-220 package, facilitating efficient heat dissipation.
This MOSFET is commonly used in applications such as power supplies, motor drives, and high-voltage switching circuits due to its reliability and efficiency. Additionally, the suffix “NSPBF” indicates it is lead-free and compliant with RoHS (Restriction of Hazardous Substances) standards, making it environmentally friendly.
Overall, the IRF640NSPBF is a versatile component ideal for engineers looking to enhance the performance of their power electronic designs.
Features
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of 9.2A at a case temperature of 25°C.
3. Low R_DS(on): On-resistance is typically 0.36 ohms at V_GS = 10V, which reduces power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2V to 4V, allowing for efficient driving.
5. Fast Switching: Designed for rapid switching applications, minimizing delay and energy loss.
6. Surface-Mount Package: Offered in a D2PAK (TO-263) package for easy integration into compact designs.
7. Thermal Performance: Provides good thermal management, facilitating operation in demanding environments.
These features make the IRF640NSPBF suitable for applications such as DC-DC converters, motor control, and power management systems.
Package
Pinout
1. Gate (G) - This pin controls the MOSFET and is used to turn it on or off by applying a voltage.
2. Drain (D) - This pin connects to the load and is where current flows out when the MOSFET is turned on.
3. Source (S) - This pin is connected to ground (in most applications) and is where the current enters when the MOSFET is turned on.
The IRF640NSPBF is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 200V and a maximum continuous drain current (I_D) of 9.2A. It is widely used in power switching applications and in circuits requiring efficient control of high voltages and currents.
Manufacturer
Application
Equivalent
Shipping
Shipping MethodsWe
offer global shipping services through DHL, FedEx, TNT, UPS, or any other forwarder of your choice.
Shipping Fee Reference (DHL/FedEx):
DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.
FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.
UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.
TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.
EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.
Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.
Payments
Payment Methods
The Payment term is 100% Prepaid.
Currently, we only accept the below payment methods:
1. PayPal
2. Credit/ Debit Card
3. Wire Transfer
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