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IRF640PBF
MOSFET N-CH 200V 18A TO220AB
- Manufacturer
- Mfr. Part #IRF640PBF
- Package TO-220-3
- Datasheet IRF640PBF DataSheet
- In Stock7747
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Specifications
| Package | Bulk |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 18A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 180mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 70 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1300 pF @ 25 V |
| PowerDissipation(Max) | 125W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Overview
Description
The IRF640PBF is packaged in a TO-220 format, allowing for effective heat dissipation and easier mounting on heat sinks. It operates efficiently at high speeds, making it ideal for high-frequency applications. Additionally, the device is environmentally friendly as it is lead-free and complies with RoHS standards.
Overall, the IRF640PBF is a reliable choice for designers seeking robust performance in their power electronic circuits.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, allowing it to handle high-voltage applications.
2. Current Rating: It supports a continuous drain current (I_D) of 9.2A at 25°C, suitable for medium to high-power applications.
3. On-Resistance: The R_DS(on) is low at approximately 0.18 ohms, reducing power loss during operation.
4. Gate Threshold Voltage: Gate threshold voltage (V_GS(th)) ranges from 2V to 4V, permitting easy driving with standard logic levels.
5. Package Type: Typically available in TO-220 and other packages, allowing for efficient heat dissipation.
6. Fast Switching Speed: Designed for high-speed switching, making it ideal for applications like power supplies and motor drivers.
7. Thermal Performance: It features a high maximum junction temperature of 150°C, enhancing reliability in challenging environments.
These characteristics make the IRF640PBF suitable for various applications in power electronics and automotive systems.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): The drain pin is where the current flows out of the MOSFET. It connects to the load in a circuit.
3. Source (S): The source pin is where the current enters the MOSFET. It is typically connected to ground or a negative voltage in an N-channel configuration.
The IRF640PBF is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 9.2A. Its low on-resistance (R_DS(on)) makes it suitable for power switching applications.
Manufacturer
Application
Equivalent
Shipping
Shipping MethodsWe
offer global shipping services through DHL, FedEx, TNT, UPS, or any other forwarder of your choice.
Shipping Fee Reference (DHL/FedEx):
DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.
FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.
UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.
TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.
EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.
Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.
Payments
Payment Methods
The Payment term is 100% Prepaid.
Currently, we only accept the below payment methods:
1. PayPal
2. Credit/ Debit Card
3. Wire Transfer
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