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IRF7313TRPBF
MOSFET 2N-CH 30V 6.5A 8-SOIC
- Manufacturer
- Mfr. Part #IRF7313TRPBF
- Package SOIC-8
- Datasheet IRF7313TRPBF DataSheet
- In Stock2833
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Specifications
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 6.5A |
| RdsOn(Max)@IdVgs | 29mOhm @ 5.8A, 10V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 33nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 650pF @ 25V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Overview
Description
This MOSFET is housed in a compact TO-220 package, making it easy to mount on PCBs. Its gate threshold voltage (V_GS(th)) ranges from 1V to 3V, allowing for compatibility with low-voltage drive circuits. The IRF7313TRPBF is also RoHS compliant, ensuring it meets environmental standards.
Overall, this device is well-suited for applications requiring efficient switching and high current handling, making it a popular choice in consumer electronics, automotive, and industrial sectors.
Features
- Voltage Rating: 30V maximum drain-source voltage (Vds).
- Current Rating: Continuous drain current (Id) up to 50A.
- Rds(on): Low on-resistance typically around 0.015Ω at Vgs = 10V, enabling efficient power management.
- Gate Threshold Voltage (Vgs(th)): Typically between 1-3V, allowing for low gate drive requirements.
- Package: Available in a TO-220 package, facilitating ease of heat dissipation and PCB mounting.
- Fast Switching: Designed for rapid turn-on and turn-off, making it suitable for high-frequency applications.
- Thermal Characteristics: Good thermal performance with a maximum junction temperature rating of 175°C.
These attributes make the IRF7313TRPBF ideal for applications such as power converters, motor controllers, and other power management systems.
Package
Pinout
1. Gate 1: Control terminal for the first N-channel MOSFET.
2. Drain 1: Drain terminal for the first N-channel MOSFET.
3. Source 1: Source terminal for the first N-channel MOSFET.
4. Source 2: Source terminal for the second N-channel MOSFET.
5. Drain 2: Drain terminal for the second N-channel MOSFET.
6. Gate 2: Control terminal for the second N-channel MOSFET.
7. Gate 1 (N/C): Not connected.
8. Gate 2 (N/C): Not connected.
The device is designed for high-speed switching applications, including power management, motor control, and DC-DC converters. The IRF7313TRPBF features low on-resistance and fast switching times, making it suitable for various power electronic applications.
Manufacturer
Application
Equivalent
1. BSS123 (N-channel MOSFET, lower voltage)
2. IRF730 (single N-channel MOSFET, similar features)
3. SI7460 (dual N-channel MOSFET in a similar configuration)
Always verify specifications like voltage, current, and package type for compatibility before substitution.
Shipping
Shipping MethodsWe
offer global shipping services through DHL, FedEx, TNT, UPS, or any other forwarder of your choice.
Shipping Fee Reference (DHL/FedEx):
DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.
FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.
UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.
TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.
EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.
Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.
Payments
Payment Methods
The Payment term is 100% Prepaid.
Currently, we only accept the below payment methods:
1. PayPal
2. Credit/ Debit Card
3. Wire Transfer
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