IRFP4868PBF

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IRFP4868PBF

MOSFET N-CH 300V 70A TO247AC

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Specifications

Package Tube
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 300 V
Current-ContinuousDrain(Id)@25°C 70A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 32mOhm @ 42A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 270 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 10774 pF @ 50 V
PowerDissipation(Max) 517W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AC

Overview

Description

The IRFP4868PBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. It features a maximum drain-source voltage (Vds) of 60V, a continuous drain current (Id) of 50A, and a low on-resistance (Rds(on)) of approximately 0.025 ohms at a gate-source voltage (Vgs) of 10V. This MOSFET is suitable for power management applications, including switching power supplies, motor drivers, and DC-DC converters.
The IRFP4868PBF is packaged in a TO-220 form factor, allowing for effective heat dissipation and ease of mounting. It also has a fast switching speed, making it ideal for high-frequency applications. The "PBF" suffix indicates that the part is RoHS compliant, meaning it is free from hazardous substances, which is important for environmental considerations. Overall, the IRFP4868PBF is a reliable choice for engineers seeking efficient power solutions in various electronics projects.

Features

The IRFP4868PBF is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: 55V maximum drain-source voltage (V_DS).
2. Current Rating: Continuous drain current (I_D) of 75A, suitable for high-load applications.
3. On-Resistance: Low R_DS(on) of 0.034 ohms at V_GS = 10V, which ensures minimal power loss during operation.
4. Gate Threshold Voltage: V_GS(th) ranges from 2V to 4V, allowing for easy drive with standard gate voltages.
5. Package: Available in a TO-220 package, providing good thermal performance and easy mounting.
6. Switching Speed: Fast switching capability, making it suitable for PWM applications and efficient power conversion.
7. Thermal Resistance: Low thermal resistance junction-to-case, enhancing heat dissipation.
Overall, the IRFP4868PBF is ideal for applications such as DC-DC converters, motor drives, and inverters, providing high efficiency and reliability.

Package

The IRFP4868PBF is packaged in a TO-220 format, which is a type of transistor package commonly used for power devices.

Pinout

The IRFP4868PBF is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin controls the ON/OFF state of the MOSFET by applying voltage.
2. Drain (D): This pin is connected to the load and carries the current when the MOSFET is in the ON state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply.
This MOSFET is designed for high-speed switching applications and can handle high voltages and currents, making it suitable for various power management and conversion applications. Its features include low gate charge and high efficiency, which are ideal for applications in power supply circuits, motor control, and other electronic devices.

Manufacturer

The manufacturer of the IRFP4868PBF is Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in products related to power management, automotive, industrial, and security applications. Infineon is known for its innovations in power semiconductors, including MOSFETs, IGBTs, and power ICs, catering to a wide range of industries such as automotive, industrial automation, and consumer electronics. With a focus on energy efficiency and sustainability, Infineon plays a crucial role in enabling smart technologies and renewable energy applications.

Application

The IRFP4868PBF is an N-channel MOSFET primarily used in power applications such as electric vehicles, renewable energy systems, and industrial motor drives. It is suitable for high-frequency switching, DC-DC converters, and power inverters due to its low on-resistance and high efficiency. Other applications include power management in consumer electronics and heating elements in various devices.

Equivalent

Equivalent products to the IRFP4868PBF MOSFET include the AUIRF4868P, STP75NF75, and FQP75N60. These alternatives share similar voltage, current ratings, and characteristics, making them suitable replacements in various applications. Always verify specific parameters such as RDS(on), gate charge, and package type for compatibility.

Shipping

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Shipping Fee Reference (DHL/FedEx):

DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.

FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.

UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.

TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.

EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.

Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.

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