IRFU5305PBF

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IRFU5305PBF

IRFU5305 - 20V-250V P-CHANNEL PO

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Specifications

Package Bulk
Series HEXFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 55 V
Current-ContinuousDrain(Id)@25°C 31A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 65mOhm @ 16A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 63 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1200 pF @ 25 V
PowerDissipation(Max) 110W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage IPAK (TO-251AA)

Overview

Description

IRFU5305PBF is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It belongs to the family of N-channel MOSFETs, designed for high-efficiency applications, including power management, motor control, and power supply circuits.
Key features often include low on-resistance (RDS(on)), high-speed switching capabilities, and robust thermal performance, making it suitable for applications that require fast response times and efficient power conversion. The "PBF" designation indicates that the MOSFET is lead-free and compliant with RoHS standards, ensuring environmental safety.
The part number IRFU5305PBF typically indicates specific electrical characteristics, such as voltage and current ratings, which make it ideal for various industrial and consumer electronics applications. Its reliability and efficiency help improve overall system performance while minimizing energy losses. For detailed specifications and application guidelines, refer to the manufacturer's datasheet.

Features

The IRFU5305PBF is a N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: It can handle continuous drain currents (I_D) up to 50A, making it suitable for power applications.
3. On-Resistance: The R_DS(on) is low, typically around 0.022Ω at V_GS = 10V, which helps reduce power loss and increase efficiency.
4. Gate Threshold Voltage: The gate-to-source threshold voltage (V_GS(th)) ranges from 1V to 2.5V, enabling it to be driven with lower gate voltages.
5. Package Type: It is available in a TO-220 package, providing good thermal performance and ease of heat dissipation.
6. Fast Switching Speed: The device is capable of fast turn-on and turn-off, making it suitable for applications like motor control, power supplies, and DC-DC converters.
Overall, the IRFU5305PBF is an efficient choice for various electronic applications requiring robust performance.

Package

The IRFU5305PBF is packaged in a TO-220 format. This package type features a metal tab for heat dissipation and is commonly used for power transistors, allowing for efficient thermal management in various electronic applications.

Pinout

The IRFU5305PBF is an N-channel MOSFET featuring a total of 3 pins.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET from the load. The voltage at this pin can vary depending on the application.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. Current flows out of this pin when the device is turned on.
The IRFU5305PBF is designed for applications requiring high efficiency and fast switching, commonly used in power management, motor control, and other electronic circuits.

Manufacturer

The IRFU5305PBF is manufactured by International Rectifier, which is a subsidiary of Infineon Technologies. International Rectifier specializes in power management and semiconductor solutions, particularly focusing on high-performance analog and digital power electronics. They provide a wide range of products including power MOSFETs, IGBTs, and integrated circuits for various applications in the automotive, industrial, and consumer markets. Infineon Technologies, the parent company, is a global leader in semiconductor solutions that enable efficient energy management and transportation systems, as well as security and communication technologies.

Application

The IRFU5305PBF is an N-channel MOSFET primarily used in power management applications, such as DC-DC converters, motor control, and power switching. It is suitable for high-efficiency applications due to its low on-resistance and fast switching capabilities. Common areas include consumer electronics, industrial automation, and renewable energy systems.

Equivalent

The IRFU5305PBF is a N-channel MOSFET. Equivalent products include the STP30NF10, FQP30N10, and BS170. Always check datasheets for specific ratings and characteristics to ensure compatibility.

Shipping

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Shipping Fee Reference (DHL/FedEx):

DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.

FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.

UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.

TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.

EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.

Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.

Payments

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