IRGIB15B60KD1P

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IRGIB15B60KD1P

IGBT 600V 19A 52W TO220FP

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Specifications

Supplier Rochester Electronics, LLC,Infineon Technologies
Package Bulk,Tube
ProductStatus Obsolete
IGBTType NPT
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 19 A
Current-CollectorPulsed(Icm) 38 A
Vce(on)(Max)@VgeIc 2.2V @ 15V, 15A
Power-Max 52 W
SwitchingEnergy 127µJ (on), 334µJ (off)
InputType Standard
GateCharge 56 nC
Td(on/off)@25°C 30ns/173ns
TestCondition 400V, 15A, 22Ohm, 15V
ReverseRecoveryTime(trr) 67 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-220-3 Full Pack

Overview

Description

The IRGIB15B60KD1P is an insulated gate bipolar transistor (IGBT) designed for high-efficiency power applications. It features a voltage rating of 600V and a current rating of 15A, making it suitable for various uses, including motor drives, power inverters, and industrial equipment. This IGBT combines the advantages of both MOSFETs and bipolar transistors, offering low conduction losses and fast switching speeds. Its insulation gate allows for easy control, enhancing overall system efficiency.
Key characteristics include a low gate threshold voltage, high-speed switching capabilities, and robust thermal performance. The IRGIB15B60KD1P is packaged in a TO-220 format, facilitating easy heat dissipation and mounting in various electronic designs. It is commonly utilized in applications that require reliable performance and energy efficiency. Overall, this device is ideal for engineers looking for high-performance solutions in power electronics.

Features

The IRGIB15B60KD1P is an insulated gate bipolar transistor (IGBT) designed for high-performance applications. Key features include:
1. Voltage Rating: 600V maximum collector-emitter voltage.
2. Current Rating: 15A continuous collector current, allowing for robust performance in power applications.
3. Low Switching Losses: Optimized for efficiency, reducing energy losses during operation.
4. High Gain: Offers a high current gain, improving overall performance and efficiency.
5. Thermal Stability: Designed to operate effectively at elevated temperatures, ensuring reliability in challenging environments.
6. Soft Recovery Characteristics: Reduces electromagnetic interference (EMI) and enhances the performance of switching circuits.
7. Compact Package: Typically available in a TO-220 or similar package for easy mounting and thermal management.
These features make the IRGIB15B60KD1P suitable for applications such as motor drives, inverters, and various industrial automation systems.

Package

The IRGIB15B60KD1P is a high voltage IGBT (Insulated Gate Bipolar Transistor) packaged in a standard TO-220 housing. This package type is designed for efficient heat dissipation and ease of installation in various applications, including power conversion and motor control.

Pinout

The IRGIB15B60KD1P is an insulated gate bipolar transistor (IGBT) module. It features a total of 15 pins. The primary functions of these pins include:
1. Gate (G) - For the control signal, enabling the IGBT to switch on and off.
2. Collector (C) - Connects to the load and carries the main current when the IGBT is in the on state.
3. Emitter (E) - Returns current to ground or the negative side of the power supply.
4. Case/Heat Sink (often marked) - Used for thermal management to dissipate heat generated during operation.
The design is optimized for high efficiency and fast switching, making it suitable for applications such as motor drives, induction heating, and power inverters. Always refer to the specific datasheet for detailed pin configuration and electrical characteristics.

Manufacturer

The IRGIB15B60KD1P is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in developing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors, primarily for automotive, industrial, and communication sectors. Infineon is recognized for its innovation in power management and energy efficiency, contributing to various applications such as electric vehicles, renewable energy systems, and smart power systems. Through its focus on high-performance and reliable semiconductor technologies, Infineon plays a significant role in advancing modern electronics and driving the transition to a more sustainable future.

Application

The IRGIB15B60KD1P is an insulated gate bipolar transistor (IGBT) primarily used in high-power applications such as motor drives, inverters, UPS systems, and renewable energy systems like solar inverters. Its features make it suitable for switching applications in industrial automation, electric vehicles, and traction systems, where efficient power conversion and control are critical.

Equivalent

The IRGIB15B60KD1P is an IGBT module primarily used in inverter applications. Equivalent products include the following IGBT modules:
1. FGA15N60 - from Fairchild
2. CM75DY-24H - from Mitsubishi
3. MG75J1 - from ON Semiconductor
4. IXGH40N60 - from IXYS
Always check specifications to ensure compatibility with your application.

Shipping

Shipping MethodsWe

offer global shipping services through DHL, FedEx, TNT, UPS, or any other forwarder of your choice.


Shipping Fee Reference (DHL/FedEx):

DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.

FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.

UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.

TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.

EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.

Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.

Payments

Payment Methods

The Payment term is 100% Prepaid.

Currently, we only accept the below payment methods:

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2. Credit/ Debit Card

3. Wire Transfer

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