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IXFN170N65X2
MOSFET N-CH 650V 170A SOT227B
- Manufacturer
- Mfr. Part #IXFN170N65X2
- Package
- Datasheet
- In Stock7243
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Specifications
| Supplier | IXYS |
| Package | Tube |
| Series | HiPerFET™, Ultra X2 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 170A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 13mOhm @ 85A, 10V |
| Vgs(th)(Max)@Id | 5V @ 8mA |
| GateCharge(Qg)(Max)@Vgs | 434 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 27000 pF @ 25 V |
| PowerDissipation(Max) | 1170W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Chassis Mount |
| SupplierDevicePackage | SOT-227B |
Overview
Description
- Type/rating: Single IGBT, 650 V blocking voltage and about 170 A continuous current.
- Technology: Trench-gate IGBT designed for low conduction loss and fast switching; typically with an anti-parallel diode for freewheeling.
- Applications: Power electronics such as motor drives, solar/inverter systems, DC-DC converters, and high-voltage switching duties.
- Packaging: Available in standard power packages (e.g., TO-220AB/TO-247 variants), suitable for heat sinking and through-hole or surface-mount layouts depending on the specific variant.
- Important specs to consult in the datasheet: Rds(on), Vce(sat), switching speeds, safe operating area (SOA), gate drive requirements, and thermal characteristics.
If you need precise numbers (Rds(on), Vce(sat), gain, and SOA) or the exact package variant, refer to the latest IXYS/ON Semiconductor datasheet for IXFN170N65X2.
Features
- Dual N-channel IGBTs in a single package (two devices in one module)
- 650 V blocking voltage
- 170 A continuous current per device
- Fast switching performance suitable for PWM, inverters, motor drives
- Low Vce(sat) for reduced conduction losses
- Robust dv/dt and avalanche ruggedness for power electronics
- Suitable for bridge/topology configurations with good thermal handling
- Commonly used in switch-mode power supplies, UPS, and motor-drive applications
Note: for precise electrical parameters (gate drive requirements, switching speeds, thermal ratings, packaging details), see the official datasheet.
Package
Pinout
Function: IXFN170N65X2 is an N‑channel, enhancement‑mode power MOSFET (650 V class, high current capability) used for high‑voltage switching in power supplies, inverters, motor drives and other power‑conversion applications.
Manufacturer
Type of company: a semiconductor company specializing in power semiconductors and related ICs — power MOSFETs, IGBTs, diodes, RF and analog devices for power conversion, motor drive, industrial, automotive and renewable-energy applications.
Application
- High-voltage switch-mode power supplies and DC-DC converters
- Motor control (DC and AC motors, servo drives)
- Uninterruptible power supplies (UPS) and inverters
- Solar PV inverters and grid-tied power electronics
- Industrial power switching (welding, induction heating)
Equivalent
Shipping
Shipping MethodsWe
offer global shipping services through DHL, FedEx, TNT, UPS, or any other forwarder of your choice.
Shipping Fee Reference (DHL/FedEx):
DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.
FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.
UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.
TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.
EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.
Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.
Payments
Payment Methods
The Payment term is 100% Prepaid.
Currently, we only accept the below payment methods:
1. PayPal
2. Credit/ Debit Card
3. Wire Transfer
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