MMBT5551LT3G

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MMBT5551LT3G

TRANS NPN 160V 0.6A SOT23-3

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Specifications

Supplier onsemi,Rochester Electronics, LLC
Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 600 mA
Voltage-CollectorEmitterBreakdown(Max) 160 V
VceSaturation(Max)@IbIc 200mV @ 5mA, 50mA
Current-CollectorCutoff(Max) 100nA
DCCurrentGain(hFE)(Min)@IcVce 80 @ 10mA, 5V
Power-Max 225 mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Overview

Description

The MMBT5551LT3G is a NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector current of 600 mA and a collector-emitter voltage of 50 V, making it suitable for a variety of electronic circuits. With a current gain (hFE) ranging from 100 to 800, it provides efficient signal amplification. The transistor comes in a compact SOT-23 package, making it ideal for space-constrained applications in consumer electronics, automotive, and industrial devices. The operating temperature range is typically from -55°C to +150°C, ensuring reliable performance in diverse environments. Its low saturation voltage and fast switching capabilities enhance efficiency in power management applications. Overall, the MMBT5551LT3G is a versatile component widely used in both hobbyist and professional electronics projects.

Features

The MMBT5551LT3G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Key features include:
1. Voltage Rating: Maximum collector-emitter voltage (Vce) of 45V.
2. Current Rating: Continuous collector current (Ic) of up to 600mA.
3. Power Dissipation: Maximum power dissipation of 500mW at room temperature.
4. Gain: High DC current gain (hFE) typically ranges from 100 to 300.
5. Package Type: Available in a SOT-23 package, which is compact and suitable for surface-mount applications.
6. Frequency Response: Transition frequency (ft) of approximately 150MHz, making it suitable for RF applications.
7. Thermal Stability: Designed for good thermal stability with a low thermal resistance.
These features make the MMBT5551LT3G suitable for various applications, including audio amplification, switching, and signal processing in consumer electronics.

Package

The MMBT5551LT3G is packaged in a SOT-23 (Surface Mount) package type. This compact package is designed for easy mounting on printed circuit boards (PCBs) and is commonly used for low-power applications.

Pinout

The MMBT5551LT3G is a NPN transistor commonly used for switching and amplification applications. It comes in a SOT-23 package, which has three pins.
Pin Configuration:
1. Emitter (E) - This pin is connected to the ground or the negative side of the circuit.
2. Base (B) - This pin is used to control the transistor’s operation; applying a voltage here turns the transistor on or off.
3. Collector (C) - This pin connects to the load or the positive side of the circuit where current flows through when the transistor is activated.
In summary, the MMBT5551LT3G has a total of 3 pins with designated functions as emitter, base, and collector.

Manufacturer

The MMBT5551LT3G is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in a wide range of products, including discrete semiconductors, integrated circuits, and optoelectronics. They serve various markets, such as automotive, industrial, communications, and consumer electronics. The company focuses on providing energy-efficient solutions and innovative technologies to meet the demands of modern electronic applications.

Application

The MMBT5551LT3G is a NPN bipolar junction transistor (BJT) commonly used in low-power switching and amplification applications. It is suitable for audio and RF amplification, signal processing, and as a general-purpose transistor in consumer electronics, communication devices, and automotive applications. Its compact size makes it ideal for space-constrained designs in various electronic circuits.

Equivalent

The MMBT5551LT3G is a NPN bipolar junction transistor (BJT) commonly used for general-purpose amplification and switching. Equivalent products include the 2N5551, MMBT5551, and MMBT5551LT1. Always check the datasheet for specific parameters like voltage, current ratings, and package type to ensure compatibility.

Shipping

Shipping MethodsWe

offer global shipping services through DHL, FedEx, TNT, UPS, or any other forwarder of your choice.


Shipping Fee Reference (DHL/FedEx):

DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.

FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.

UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.

TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.

EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.

Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.

Payments

Payment Methods

The Payment term is 100% Prepaid.

Currently, we only accept the below payment methods:

1. PayPal

2. Credit/ Debit Card

3. Wire Transfer

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