MT29F2T08EMLEEJ4-R:E

MT29F2T08EMLEEJ4-R:E is Micron’s parallel NAND flash memory device. It provides non-volatile storage for embedded systems, consumer electronics, and SSDs.
What the part number conveys (roughly)
- MT29F: Micron NAND Flash family.
- 2T08: ~2 Gbit density with an 8-bit data bus (x8); often Signifies Toggle/ONFI-style interface options.
- EMLEEJ4: device revision, package/lead options, and generic process/temp metrics.
- -R:E: specific packaging, temperature grade, and lot/options (exact meaning is in the datasheet).
Key characteristics (typical)
- Density: ~2 Gbit; organized for page/block operations typical of NAND.
- Interface: high-speed parallel NAND interface (ONFI/Toggle‑style depending on revision).
- Operation: reads, programs (writes) in pages and erases in blocks; requires ECC and wear leveling from a controller.
- Usage: common in embedded storage, flash-based devices, and SSD controllers.
Notes
- Exact page size, block size, endurance, voltage, and timing depend on revision and temperature grade. For precise specs, pinout, and electrical characteristics, consult the MT29F2T08EMLEEJ4-R:E datasheet and Micron product page.

Here are the key features of MT29F2T08EMLEEJ4-R:E (Micron NAND Flash):
- Density: 2 Gbit MLC NAND
- Interface: x8 I/O, ONFI-compliant
- Page size: 2 KB data + 64 B spare
- Block structure: 64 pages per block; 2048 blocks total
- Operating voltage: 3.3 V (core/I/O)
- Multi-plane operation for higher throughput
- Bad block management and wear leveling support
- Random data input and partial page programming
- ECC: host-assisted error correction (built-in ECC support)
- Data retention: typically ~10 years
- Endurance: typical P/E cycles in the low thousands (MLC range)
- RoHS-compliant packaging and parts (R:E variant)
Note: exact timings (PROG/ERASE), temperatures, and advanced features may vary slightly by revision; consult the datasheet for precise specs.

Package type cannot be deduced from the part number alone. MT29F2T08EMLEEJ4-R:E is a Micron NAND flash series that can come in multiple packages (e.g., 48‑pin TSOP and various FBGA options). Check the specific datasheet or packaging code on the exact device/reel to confirm.

- Pin count: 48 pins (48-pin package).
- Function: NAND flash memory device (2 Gb, x8 I/O) with a standard NAND interface (CLE, ALE, WE#, RE#, CE#, WP#, RB#); data lines DQ0–DQ7; address inputs A0–A12; power/ground pins (VCC/VSS) available.

- Manufacturer: Micron Technology, Inc.
- About the company: An American multinational semiconductor company that designs, manufactures, and sells memory and storage technologies (DRAM, NAND/NOR flash). It’s one of the world’s leading memory manufacturers.

MT29F2T08EMLEEJ4-R:E is a Micron NAND flash device. Typical application areas include:
- Embedded systems and consumer electronics
- SSDs, USB drives, and memory cards
- Digital cameras/camcorders
- Set-top boxes and mobile devices
- Automotive infotainment and telematics
- Industrial control equipment (firmware/boot storage)

There isn’t a public one‑to‑one cross reference for MT29F2T08EMLEEJ4-R:E. Equivalents are other 2‑Gbit ONFI NAND Flash devices with an x8 interface and the same page/plane layout and voltage. To find a drop‑in, use Micron’s cross‑reference tool or distributor catalogs to locate 2Gbit ONFI NAND with matching page size, voltage (1.8V/3.3V), timing, and package. Then verify ECC requirements and operating temp. Potential vendors to check: other major NAND suppliers (e.g., Samsung, Kioxia, SK Hynix).