MT40A2G4WE-083E:B

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MT40A2G4WE-083E:B

IC DRAM 8GBIT PARALLEL 78FBGA

  • Manufacturer
  • Mfr. Part #MT40A2G4WE-083E:B
  • Package 78-TFBGA
  • Datasheet
  • In Stock2780

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Specifications

Package Tray
ProductStatus Obsolete
MemoryType Volatile
MemoryFormat DRAM
Technology SDRAM - DDR4
MemorySize 8Gb (2G x 4)
MemoryInterface Parallel
ClockFrequency 1.2 GHz
Voltage-Supply 1.14V ~ 1.26V
OperatingTemperature 0°C ~ 95°C (TC)
MountingType Surface Mount
Package/Case 78-TFBGA

Overview

Description

MT40A2G4WE-083E:B is a Micron DDR3 SDRAM memory device (not a full module). Key points:
- Family and type: DDR3 SDRAM bare die/chip, from the MT40A2G4WE family.
- Capacity/organization: typically 2 Gbit total per die, organized as 2Gbit × 4 (x4 data width).
- Banks and features: standard DDR3 device with multiple banks (usually 8), supports typical DDR3 timing and control signals.
- Electricals and suffixes: DDR3 voltage around 1.5 V (some variants use other voltages); the -083E:B suffix encodes the speed grade, temperature/packaging details, and RoHS status. Exact numbers require the datasheet.
- Usage: used as a component die inside memory modules (DIMMs/SO-DIMMs) in combination with other chips to form larger capacities.
For precise speed (MT/s), voltage, timing, package, and package marking, consult the Micron MT40A2G4WE datasheet.

Features

MT40A2G4WE-083E:B is a Micron DDR3 SDRAM device. Key features:
- Density/organization: 2 Gb per die, x4 data width
- Banks: 8
- Speed: DDR3 up to 1333 MT/s (1066/1333 grade variants)
- Voltage: 1.5 V (DDR3 standard; check datasheet for variants)
- Package: FBGA
- ECC: typically non-ECC (ECC applies to modules, not individual dies)
- Applications: used as a component in DIMMs/R-DIMMs and other memory subsystems
Note: exact timings, voltage variants, and temperature range depend on the specific lot and datasheet. Refer to MT40A2G4WE-083E:B datasheet for precise specs.

Package

FBGA package — a 96-ball Fine-Pinned Ball Grid Array (FBGA-96) variant.

Manufacturer

- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational memory and storage technology company that designs, manufactures, and sells DRAM, NAND flash, and NOR flash memory. Headquartered in Boise, Idaho; one of the world’s largest memory chip makers, serving computers, servers, mobile devices, and data centers. Publicly traded on NASDAQ (MU).

Application

Applications: high-density DRAM for servers/data centers (DIMMs/LPDIMMs), desktops/workstations, laptops/mobile memory, graphics/compute accelerators, networking equipment, storage controllers and SSDs, and embedded/industrial systems requiring reliable DRAM.

Equivalent

MT40A2G4WE-083E:B is Micron DDR3 SDRAM, density 2 Gb, x4 organization, 1.5 V, in a 96-ball FBGA. Equivalents depend on same density/width; possible cross-refs from other vendors include Hynix H5TQ2G63EFR, Samsung K4B4G1646F, and Nanya NT5CB256M4. For an exact match, use Micron’s cross-reference tool or DigiKey/Mouser search by density, width, speed, and package.

Shipping

Shipping MethodsWe

offer global shipping services through DHL, FedEx, TNT, UPS, or any other forwarder of your choice.


Shipping Fee Reference (DHL/FedEx):

DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.

FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.

UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.

TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.

EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.

Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.

Payments

Payment Methods

The Payment term is 100% Prepaid.

Currently, we only accept the below payment methods:

1. PayPal

2. Credit/ Debit Card

3. Wire Transfer

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