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MT41J256M16HA-125:E
IC DRAM 4GBIT PARALLEL 96FBGA
- Manufacturer
- Mfr. Part #MT41J256M16HA-125:E
- Package
- Datasheet
- In Stock3961
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Specifications
| Part Status | Obsolete |
| Base Product Number | MT41J256M16 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3 |
| Memory Size | 4Gbit |
| Memory Organization | 256M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 800 MHz |
| Voltage - Supply | 1.425V ~ 1.575V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 96-TFBGA |
| Supplier Device Package | 96-FBGA (9x14) |
| Packaging | Tray |
| Access Time | 13.75 ns |
Overview
Description
This memory chip is typically used in applications such as computers, servers, and networking equipment, where reliable and efficient memory performance is critical. It has a standard x8 or x16 organization and operates at a voltage of 1.5V. The package options and configurations support a wide range of system designs, making it versatile for different computing needs. The device also includes various features for power management and data integrity, further enhancing its usability in modern electronic systems.
Features
1. Density: 256 Megabits (32 Megabytes) per chip.
2. Organization: 16M x 16 bit configuration.
3. Data Rate: Operates at a data rate of up to 1600 MT/s (megatransfers per second).
4. Access Time: Offers low latency with a CAS latency of 11.
5. Voltage: Operates at a supply voltage of 1.5V (±0.075V).
6. Temperature Range: Suitable for commercial temperature ranges (0 to 85°C).
7. Packaging: Available in a 78-ball TFBGA package.
8. Features: Includes features like burst mode, on-die termination (ODT), and self-refresh capability.
This memory chip is commonly used in applications like consumer electronics, laptops, and other devices requiring efficient and reliable memory solutions.
Package
Pinout
Key functions of the MT41J256M16HA-125:E include:
- Data Storage: It offers a capacity of 4GB (256M x 16 bits).
- High-Speed Operation: Supports data rates up to 1600 MT/s.
- Low Power Consumption: Designed for energy efficiency, reducing overall power usage in devices.
- Burst Mode: Enables high-speed data transfers by allowing multiple data bits to be read or written in succession.
The device is commonly used in consumer electronics, computing systems, and other applications requiring reliable and fast memory performance.
Manufacturer
Application
Equivalent
1. Hynix H5TQ2G83BFR (DDR3, 2Gb)
2. Samsung K4B4G1646F (DDR3, 2Gb)
3. Micron MT41J256M16HA-15 (DDR3, 2Gb with different speed)
4. Nanya NT5CB256M16DP (DDR3, 2Gb)
Always verify compatibility with specific requirements and configurations.
Shipping
Shipping MethodsWe
offer global shipping services through DHL, FedEx, TNT, UPS, or any other forwarder of your choice.
Shipping Fee Reference (DHL/FedEx):
DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.
FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.
UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.
TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.
EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.
Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.
Payments
Payment Methods
The Payment term is 100% Prepaid.
Currently, we only accept the below payment methods:
1. PayPal
2. Credit/ Debit Card
3. Wire Transfer
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