NTJD4105CT2G

Images are for reference only

NTJD4105CT2G

MOSFET N/P-CH 20V/8V 0.63A SC88

100% Original & New

24 Hours ready to ship

365 Days Warranty

RFQ & Get more Discounts

Specifications

Part Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V, 8V
Current - Continuous Drain (Id) @ 25°C 630mA, 775mA
Rds On (Max) @ Id, Vgs 375mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 20V
Power - Max 270mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number NTJD4105

Overview

Description

NTJD4105CT2G is a surface-mount Schottky diode, commonly used in power management applications due to its low forward voltage drop and fast switching capabilities. It is designed for high-efficiency rectification in various electronic circuits, making it suitable for power supplies, battery charging, and protection circuits.
The diode features a maximum reverse voltage rating, allowing it to handle significant voltage without breakdown, while its low forward current rating supports high-speed signal processing. Its compact size enables integration into space-constrained designs, making it ideal for consumer electronics, automotive applications, and industrial equipment.
Key specifications typically include forward current ratings (often in the range of a few amperes), reverse voltage ratings, and package dimensions. The NTJD4105CT2G is a preferred choice for engineers looking to enhance the efficiency and reliability of their electronic designs.

Features

The NTJD4105CT2G is a N-channel MOSFET designed for low-voltage, high-speed switching applications. Its key features include:
1. Voltage Rating: Maximum drain-source voltage (Vds) of 30V.
2. Current Rating: Continuous drain current (Id) of 30A at a maximum junction temperature.
3. On-Resistance: Low Rds(on) typically around 10 mΩ, ensuring efficient performance and reduced power loss.
4. Gate Threshold Voltage: Vgs(th) between 1V to 3V, facilitating low-voltage operation.
5. Package Type: Available in a TO-220 package, which provides good thermal performance.
6. Fast Switching Speed: Suitable for high-frequency applications.
7. Applications: Commonly used in power management, motor control, and DC-DC converters.
This combination of features makes the NTJD4105CT2G ideal for various electronic applications requiring efficient power management and control.

Package

The NTJD4105CT2G is packaged in a surface-mount SO-8 (Small Outline 8) package type. This compact design is suitable for various applications in electronic circuits, providing efficient thermal performance and space-saving benefits.

Pinout

The NTJD4105CT2G is a dual N-channel MOSFET with a total of 8 pins. Its primary functions include acting as a switch or amplifier in electronic circuits. The device is optimized for low on-resistance and high-speed switching applications, making it suitable for power management and battery-operated devices.
The pin configuration is as follows:
1. Gate 1 - Controls the first N-channel MOSFET.
2. Drain 1 - Connected to the load for the first MOSFET.
3. Source 1 - Common connection for the first MOSFET.
4. Gate 2 - Controls the second N-channel MOSFET.
5. Drain 2 - Connected to the load for the second MOSFET.
6. Source 2 - Common connection for the second MOSFET.
7. Drain 1 (shared) - Can be used for connecting both MOSFETs to a common load.
8. Source 1 (shared) - Common ground for both MOSFETs.
This configuration allows for efficient control of power in various applications.

Manufacturer

The NTJD4105CT2G is a product manufactured by ON Semiconductor. ON Semiconductor is a global supplier of semiconductor-based solutions, specializing in a wide range of applications, including power management, analog, sensors, logic, and connectivity. The company focuses on energy-efficient technologies and provides products that support various markets, including automotive, industrial, and consumer electronics. Their extensive portfolio includes a variety of integrated circuits, discrete devices, and modules designed to meet the needs of diverse electronic applications.

Application

The NTJD4105CT2G is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor drivers, and power amplifiers. It is suitable for applications in consumer electronics, automotive systems, and industrial automation where efficient switching and low on-resistance are essential for performance and energy efficiency.

Equivalent

The NTJD4105CT2G is a dual N-channel MOSFET. Equivalent products include the AO3400, BSS138, and SI2302. Be sure to check specifications like voltage, current ratings, and package type to ensure compatibility in your application.

Shipping

Shipping MethodsWe

offer global shipping services through DHL, FedEx, TNT, UPS, or any other forwarder of your choice.


Shipping Fee Reference (DHL/FedEx):

DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.

FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.

UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.

TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.

EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.

Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.

Payments

Payment Methods

The Payment term is 100% Prepaid.

Currently, we only accept the below payment methods:

1. PayPal

2. Credit/ Debit Card

3. Wire Transfer

Similar