NVMFD5C674NLT1G

Images are for reference only

NVMFD5C674NLT1G

MOSFET 2N-CH 60V 42A S08FL

  • Manufacturer
  • Mfr. Part #NVMFD5C674NLT1G
  • Package SO-8
  • Datasheet
  • In Stock7353

100% Original & New

24 Hours ready to ship

365 Days Warranty

RFQ & Get more Discounts

Specifications

Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Standard
DraintoSourceVoltage(Vdss) 60V
Current-ContinuousDrain(Id)@25°C 11A (Ta), 42A (Tc)
RdsOn(Max)@IdVgs 14.4mOhm @ 10A, 10V
Vgs(th)(Max)@Id 2.2V @ 25µA
GateCharge(Qg)(Max)@Vgs 4.7nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 640pF @ 25V
Power-Max 3W (Ta), 37W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
Package/Case 8-PowerTDFN

Overview

Description

The NVMFD5C674NLT1G is a dual N-channel MOSFET designed for high-speed switching applications. It features low on-resistance (R_DS(on)) and fast switching speeds, making it suitable for power management in various electronic devices, including DC-DC converters, power amplifiers, and motor drivers.
This MOSFET operates at low gate threshold voltages, which allows for efficient control in low-voltage applications. Its compact package design enhances thermal performance and reduces PCB space requirements.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) rating of 40A, and a low on-resistance of approximately 10 mΩ at a 10V gate drive.
The NVMFD5C674NLT1G is often utilized in consumer electronics, automotive applications, and industrial systems due to its reliability and efficiency. Overall, it is a versatile component in modern electronic designs requiring effective power management solutions.

Features

The NVMFD5C674NLT1G is a P-channel MOSFET designed for high-performance switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of -30V, making it suitable for various power applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to -6.5A, providing good performance in load-switching scenarios.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)) of about 0.3 ohms at V_GS = -10V, which minimizes power loss and improves efficiency.
4. Fast Switching Speed: The MOSFET offers fast switching capabilities, ideal for applications requiring quick response times.
5. Package Type: It comes in a compact SOT-23 package, making it suitable for space-constrained designs.
6. Applications: Commonly used in power management, load switching, and DC-DC converters.
Overall, the NVMFD5C674NLT1G is a versatile component for efficient power control in electronics.

Package

The NVMFD5C674NLT1G is packaged in a PowerDFN package, specifically a 2mm x 2mm, 8-pin surface mount format. This compact package design helps optimize space and enhances thermal performance for the device.

Pinout

The NVMFD5C674NLT1G is a Power MOSFET from ON Semiconductor. It features a 5-pin configuration, which includes:
1. Gate (G) - Controls the MOSFET's switching operation.
2. Drain (D) - Connects to the load and carries the current when the MOSFET is on.
3. Source (S) - Connects to ground or the negative side of the power supply.
This MOSFET is designed for low-voltage, high-speed switching applications, making it suitable for various power management tasks in electronic devices. It typically exhibits low on-resistance and fast switching capabilities, enhancing efficiency in power circuits.
For detailed specifications and performance characteristics, refer to the manufacturer's datasheet.

Manufacturer

The manufacturer of the NVMFD5C674NLT1G is ON Semiconductor. ON Semiconductor is a global supplier of semiconductor-based solutions, providing a wide range of products including analog and mixed-signal devices, power management solutions, and digital and logic components. The company serves various industries, including automotive, industrial, consumer electronics, and communications. Established in 1999, ON Semiconductor has grown through a combination of organic development and strategic acquisitions, positioning itself as a key player in the semiconductor market. Their products are designed to meet the increasing demand for energy-efficient solutions and advanced technologies in many applications.

Application

The NVMFD5C674NLT1G is a N-channel MOSFET used in various applications, including power management, load switching, and DC-DC converters. It's ideal for high-efficiency designs in consumer electronics, automotive systems, and industrial equipment due to its low on-resistance and high-speed performance. Additionally, it's suitable for battery management systems and power supply circuits, enhancing reliability and efficiency in electronic devices.

Equivalent

The NVMFD5C674NLT1G is a dual N-channel MOSFET. Equivalent products include the BSS138, BS170, and 2N7000 series MOSFETs, as well as other N-channel MOSFETs with similar voltage and current ratings. However, always check specifications for exact match on parameters like Rds(on), Vds, and maximum current.

Shipping

Shipping MethodsWe

offer global shipping services through DHL, FedEx, TNT, UPS, or any other forwarder of your choice.


Shipping Fee Reference (DHL/FedEx):

DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.

FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.

UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.

TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.

EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.

Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.

Payments

Payment Methods

The Payment term is 100% Prepaid.

Currently, we only accept the below payment methods:

1. PayPal

2. Credit/ Debit Card

3. Wire Transfer

Similar