NVMJS2D5N06CLTWG

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NVMJS2D5N06CLTWG

MOSFET N-CH 60V 31A/164A 8LFPAK

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  • Mfr. Part #NVMJS2D5N06CLTWG
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  • Datasheet
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Specifications

Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 31A (Ta), 164A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 2.4mOhm @ 50A, 10V
Vgs(th)(Max)@Id 2V @ 135µA
GateCharge(Qg)(Max)@Vgs 52 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3600 pF @ 25 V
PowerDissipation(Max) 3.9W (Ta), 113W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-LFPAK

Overview

Description

NVMJS2D5N06CLTWG is a specific part number for a non-volatile memory device, likely a NAND flash memory chip, used in various electronic applications. This type of memory retains data even when power is turned off, making it ideal for storage in devices like smartphones, tablets, and SSDs.
The device typically features high density, fast read/write speeds, and energy efficiency. It is often used in consumer electronics, automotive applications, and industrial systems. NVM (Non-Volatile Memory) technology is crucial for modern computing, offering reliable data storage solutions that support both performance and durability.
For detailed specifications, such as capacity, interface type, and performance metrics, consulting the manufacturer's datasheet is recommended. This document will provide essential information for engineers and designers looking to integrate this memory component into their projects.

Features

The NVMJS2D5N06CLTWG is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
- Voltage Rating: It typically handles a drain-source voltage (V_DS) of up to 60V, making it suitable for medium-voltage applications.
- Current Rating: It can manage continuous drain currents (I_D) of approximately 50A, providing robust performance for demanding tasks.
- R_DS(on): The on-resistance is low, often around 0.014 ohms, which minimizes power loss during operation and enhances efficiency.
- Gate Threshold Voltage: It has an appropriate gate threshold voltage (V_GS(th)), allowing it to be driven efficiently by standard logic levels.
- Package: Typically housed in a TO-220 package, it offers good heat dissipation characteristics for thermal management.
- Applications: Suitable for power supplies, DC-DC converters, and motor control due to its fast switching speed and reliability.
These features contribute to its effectiveness in high-efficiency power conversion and switching applications.

Package

The NVMJS2D5N06CLTWG is typically packaged in a surface mount device (SMD) format, specifically a SOIC-8 package. This compact packaging allows for efficient space utilization on printed circuit boards.

Pinout

The NVMJS2D5N06CLTWG is a power MOSFET with a total of 8 pins. It features an N-channel structure, designed for high efficiency in power management applications.
The typical pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET switching.
2. Drain (D): The output terminal that connects to the load.
3. Source (S): The return path for current.
4. Gate (G): Another gate option for dual-gate configurations.
5. Drain (D): Secondary drain for enhanced performance in circuits.
6. Source (S): Secondary source for increased flexibility.
7. Body (B): Internal diode body connection.
8. Substrate (substrate): Can be connected to the source for improved performance.
This device is ideal for applications like power conversion, motor control, and load switching due to its low on-resistance and high-speed switching capabilities.

Manufacturer

The NVMJS2D5N06CLTWG is manufactured by ON Semiconductor. ON Semiconductor is a global supplier of semiconductor-based solutions, focusing on energy-efficient innovations. The company designs, manufactures, and sells a wide variety of semiconductor components, including power management, analog, and logic devices, catering to various industries such as automotive, industrial, and consumer electronics. ON Semiconductor is known for its commitment to sustainability and efficiency in its products, aimed at helping customers reduce energy consumption and enhance performance in their applications.

Application

The NVMJS2D5N06CLTWG is a power MOSFET primarily used in automotive, industrial, and consumer electronics applications. Its low on-resistance and high-speed switching capabilities make it suitable for power management, motor control, DC-DC converters, and battery management systems. Additionally, it can be utilized in high-efficiency power supplies and LED drivers, enhancing energy efficiency and thermal performance.

Equivalent

The NVMJS2D5N06CLTWG chip is a 60V N-channel MOSFET. Equivalent products include:
1. STP2N60M2 (STMicroelectronics)
2. IRF620 (Infineon)
3. MTP2N60E (ON Semiconductor)
4. 2N60 (Fairchild Semiconductor)
Always check specific datasheets for precise electrical characteristics and suitability for your application.

Shipping

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Shipping Fee Reference (DHL/FedEx):

DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.

FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.

UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.

TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.

EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.

Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.

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