SI2323DDS-T1-GE3

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SI2323DDS-T1-GE3

MOSFET P-CH 20V 5.3A SOT-23

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Specifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 5.3A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 1.8V, 4.5V
RdsOn(Max)@IdVgs 39mOhm @ 4.1A, 4.5V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 36 nC @ 8 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 1160 pF @ 10 V
PowerDissipation(Max) 960mW (Ta), 1.7W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23

Overview

Description

The SI2323DDS-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications, including power management and switching. It features low on-resistance, which enhances efficiency and reduces heat generation during operation. The device is often used in low-voltage applications and is capable of handling significant current levels, making it suitable for power supply circuits, motor drives, and load switching.
Key specifications include a maximum drain-source voltage (Vds) of around 30V and a maximum continuous drain current (Id) of approximately 20A. Its compact package size helps in saving board space while providing reliable performance. The SI2323DDS-T1-GE3 is popular in consumer electronics, automotive systems, and industrial equipment due to its robust characteristics and cost-effectiveness.
When using this MOSFET, proper thermal management and circuit design considerations should be observed to ensure optimal operation and reliability in applications.

Features

The SI2323DDS-T1-GE3 is a dual N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Dual Channel: Contains two N-channel MOSFETs in a single package, optimizing space and reducing circuit complexity.
2. Low R_DS(on): Offers low on-resistance, minimizing power loss and improving efficiency, which is critical for applications like DC-DC converters.
3. High-Speed Switching: Capable of fast switching speeds, making it suitable for high-frequency applications.
4. High Voltage Rating: Typically rated for a drain-source voltage (V_DS) of up to 30V, allowing for versatility in a range of circuits.
5. Compact Package: Available in a compact SOIC-8 package, facilitating easy integration into PCB designs.
6. Thermal Performance: Features good thermal conductivity, which aids in heat dissipation during operation.
These attributes make the SI2323DDS-T1-GE3 ideal for applications in power management, automotive, and consumer electronics.

Package

The SI2323DDS-T1-GE3 is packaged in a SO-8 (Small Outline 8) package type. This surface-mount package is designed for compact applications, providing efficient thermal performance and space-saving advantages.

Pinout

The SI2323DDS-T1-GE3 is a N-channel MOSFET in a DPAK package, which has a pin count of 3. The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching behavior. Applying a voltage to this pin allows current to flow from the drain to the source.

2. Drain (D): This pin is the output where the load is connected. Current flows from the drain to the source when the device is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the circuit, completing the current path.
The SI2323DDS-T1-GE3 is designed for applications requiring efficient power management, such as in power supply circuits and DC-DC converters.

Manufacturer

The SI2323DDS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a multinational company that specializes in manufacturing discrete semiconductors and passive electronic components. Founded in 1962, it is one of the largest manufacturers in the electronics industry, providing a wide range of products such as resistors, capacitors, inductors, diodes, and MOSFETs, among others. Vishay serves various sectors, including automotive, industrial, telecommunications, consumer electronics, and computer markets, focusing on high-performance and reliable components for a diverse array of applications.

Application

The SI2323DDS-T1-GE3 is a N-channel MOSFET primarily used in power management applications. Key areas include DC-DC converters, load switches, battery management systems, and motor control circuits. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power supplies and portable electronics.

Equivalent

The SI2323DDS-T1-GE3 is a N-channel MOSFET. Equivalent products include:
1. IRLZ44N - A similar N-channel MOSFET with lower Rds(on).
2. FQP30N06L - Offers comparable voltage and current ratings.
3. BSS138 - Suitable for lower power applications.
Always verify specifications like Rds(on), Vds, and Id to ensure compatibility for your specific application.

Shipping

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Shipping Fee Reference (DHL/FedEx):

DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.

FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.

UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.

TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.

EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.

Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.

Payments

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