SI7145DP-T1-GE3

Images are for reference only

SI7145DP-T1-GE3

MOSFET P-CH 30V 60A PPAK SO-8

100% Original & New

24 Hours ready to ship

365 Days Warranty

RFQ & Get more Discounts

Specifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 60A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 2.6mOhm @ 25A, 10V
Vgs(th)(Max)@Id 2.3V @ 250µA
GateCharge(Qg)(Max)@Vgs 413 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 15660 pF @ 15 V
PowerDissipation(Max) 6.25W (Ta), 104W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

Overview

Description

The SI7145DP-T1-GE3 is a high-performance, N-channel MOSFET designed for power management applications. It features low on-resistance and fast switching capabilities, making it suitable for use in DC-DC converters, power amplifiers, and motor control circuits. The device supports a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 45A, enabling efficient operation in various electronic systems.
The Si7145DP-T1-GE3 is housed in a compact SOIC-8 package, facilitating easy integration into space-constrained designs. Its advanced thermal characteristics allow for effective heat dissipation, enhancing reliability and longevity in operation. This MOSFET is also RoHS compliant, adhering to environmental regulations.
Overall, the SI7145DP-T1-GE3 is ideal for applications requiring high efficiency and performance, making it a popular choice among engineers and designers in the electronics industry.

Features

The SI7145DP-T1-GE3 is a high-performance, dual N-channel MOSFET designed for efficient power management applications. Key features include:
1. Low On-Resistance (RDS(on)): Provides efficient conduction with minimal power loss.
2. High Voltage Rating: Supports applications up to 30V, making it suitable for various power supply designs.
3. Fast Switching Speed: Enables high-frequency operation, beneficial for switching power supplies and DC-DC converters.
4. Compact Package: Available in a small, thermally efficient SO-8 package, allowing for space-saving designs.
5. Improved Thermal Performance: Designed for better heat dissipation, enhancing reliability in high-load applications.
6. Gate Threshold Voltage: Features a low gate threshold voltage, allowing for easier drive from low-voltage microcontrollers and FET drivers.
Overall, the SI7145DP-T1-GE3 is ideal for applications such as power management, motor control, and LED driving, where efficient switching and thermal performance are critical.

Package

The SI7145DP-T1-GE3 is packaged in a 5-pin TSOT-23 (Thin Small Outline Transistor) format. This compact package type is designed for efficient thermal and electrical performance in various applications.

Pinout

The SI7145DP-T1-GE3 is a dual N-channel MOSFET designed for power management applications. It features a total of 8 pins.
### Pin Functions:
1. DRAIN (D) - The pin where the load connects; it’s the output of the MOSFET.
2. SOURCE (S) - The pin connected to ground or the lower potential side of the circuit.
3. GATE (G) - The control pin that turns the MOSFET on or off by applying a voltage.
4. DRAIN (D) - Another DRAIN pin for the second N-channel MOSFET in the package.
5. SOURCE (S) - Corresponding SOURCE pin for the second N-channel MOSFET.
6. GATE (G) - The control pin for the second N-channel MOSFET.
These pins allow for efficient switching in a compact package, making it suitable for applications like power management, DC-DC converters, and motor control.

Manufacturer

The SI7145DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Founded in 1962 and headquartered in Malvern, Pennsylvania, Vishay serves a wide range of industries, including automotive, industrial, computing, consumer, and telecommunications. The company is known for its innovation in technology and offers a diverse product portfolio, including MOSFETs, diodes, capacitors, resistors, and inductors. Vishay's extensive experience and expertise in electronic components make it a key player in the electronics industry.

Application

The SI7145DP-T1-GE3 is a high-speed, low On-Resistance MOSFET used in various applications, including power management, load switching, DC-DC converters, battery management systems, and general switching applications in consumer electronics, telecommunications, and industrial equipment. Its compact size and efficiency make it suitable for space-constrained designs.

Equivalent

The SI7145DP-T1-GE3 is a N-channel MOSFET. Equivalent products include the NXP BSS138, Vishay Si8233, and Fairchild FDS6680. For direct replacements, consider the ON Semiconductor MMBF170 or similar N-channel MOSFETs with comparable voltage and current ratings. Always check the datasheets to ensure compatibility with your specific application.

Shipping

Shipping MethodsWe

offer global shipping services through DHL, FedEx, TNT, UPS, or any other forwarder of your choice.


Shipping Fee Reference (DHL/FedEx):

DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.

FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.

UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.

TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.

EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.

Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.

Payments

Payment Methods

The Payment term is 100% Prepaid.

Currently, we only accept the below payment methods:

1. PayPal

2. Credit/ Debit Card

3. Wire Transfer

Similar