SI7149DP-T1-GE3

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SI7149DP-T1-GE3

MOSFET P-CH 30V 50A PPAK SO-8

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Specifications

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 50A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 5.2mOhm @ 15A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 147 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 4590 pF @ 15 V
PowerDissipation(Max) 69W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® SO-8

Overview

Description

The SI7149DP-T1-GE3 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) developed by Vishay Intertechnology. It is designed for high-efficiency power management applications, including DC-DC converters, motor control, and load switching. This device features a low RDS(on) (drain-source on-resistance), which minimizes power loss and heat generation during operation, making it suitable for energy-sensitive applications.
With a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) rating of up to 49A, the SI7149DP-T1-GE3 is capable of handling significant power levels. It is housed in a DPAK package, providing good thermal performance due to its larger surface area for heat dissipation.
Key specifications include fast switching speeds, high reliability, and a robust construction that supports high-frequency operation. This makes it an ideal choice for modern power circuits requiring efficiency and durability.

Features

The SI7149DP-T1-GE3 is a high-speed N-channel MOSFET designed for various applications, including power management and DC-DC converters. Key features include:
1. Low On-Resistance: Offers low R_DS(on), ensuring minimal power loss and improved efficiency.
2. High Current Rating: Capable of handling significant continuous drain current, making it suitable for demanding applications.
3. Fast Switching Speed: Facilitates rapid switching, which is crucial for high-frequency applications.
4. High Voltage Capability: Supports a wide voltage range, enabling use in high-voltage systems.
5. Package Type: Comes in a compact SOIC-8 package, allowing for space-efficient designs.
6. Thermal Performance: Features good thermal characteristics to manage heat dissipation effectively.
7. Gate-Source Voltage Range: Supports a safe gate-source voltage, enhancing reliability in operation.
These features collectively make the SI7149DP-T1-GE3 an excellent choice for power applications requiring efficiency and performance.

Package

The SI7149DP-T1-GE3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) package type, which features eight pins and is designed for surface mounting.

Pinout

The SI7149DP-T1-GE3 is a dual N-channel MOSFET with a pin count of 8. Its functions include:
1. Input Control: Designed for low on-resistance and high-speed switching applications, suitable for power management in various electronic devices.
2. Load Switching: Commonly used in power supply circuits, motor drivers, and other applications where efficient electrical switching is required.
3. Thermal Management: Enhanced thermal performance allows for operation in high-temperature environments.
The pins are typically configured as follows:
1. Gate (G1, G2): Control terminals for each MOSFET.
2. Drain (D1, D2): Output terminals for power delivery.
3. Source (S1, S2): Common reference points for the power connections.
This component is ideal for applications requiring efficient power switching and management.

Manufacturer

The manufacturer of the SI7149DP-T1-GE3 is Vishay Intertechnology, Inc. Vishay is a global leader in discrete semiconductors and passive electronic components. The company specializes in manufacturing a wide range of products, including power MOSFETs, diodes, resistors, capacitors, and inductors. Founded in 1962 and headquartered in Malvern, Pennsylvania, Vishay serves various industries such as automotive, industrial, consumer electronics, and telecommunications. Their products are known for high performance and reliability, making Vishay a significant player in the electronics market.

Application

The SI7149DP-T1-GE3 is a dual N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, power supplies, motor control, lighting control, and load switching. It is suitable for high-efficiency switching applications in consumer electronics, industrial equipment, and automotive systems due to its low on-resistance and fast switching capabilities.

Equivalent

Equivalent products to the SI7149DP-T1-GE3 chip include the IRF3205, FDS6910, and BSS138. These MOSFETs offer similar specifications, such as voltage and current ratings, but it's essential to verify specific parameters like R_DS(on), gate threshold voltage, and package type to ensure compatibility for your application. Always check the manufacturer’s datasheets for precise comparisons.

Shipping

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Shipping Fee Reference (DHL/FedEx):

DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.

FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.

UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.

TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.

EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.

Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.

Payments

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