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SI7949DP-T1-E3
MOSFET 2P-CH 60V 3.2A PPAK SO-8
- Manufacturer
- Mfr. Part #SI7949DP-T1-E3
- Package PowerPAK-SO-8
- Datasheet SI7949DP-T1-E3 DataSheet
- In Stock7439
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Specifications
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 3.2A |
| RdsOn(Max)@IdVgs | 64mOhm @ 5A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 40nC @ 10V |
| Power-Max | 1.5W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | PowerPAK® SO-8 Dual |
Overview
Description
With a maximum continuous drain current rating of 49A and a gate-source voltage range of ±20V, the SI7949DP-T1-E3 supports high-efficiency switching performance. Additionally, it has a fast switching speed, which minimizes energy losses during operation. The MOSFET is optimized for both high-frequency and high-current applications, making it versatile for use in automotive, industrial, and consumer electronics.
Overall, the SI7949DP-T1-E3 is a reliable choice for engineers seeking robust power management solutions in their designs.
Features
1. Voltage Ratings: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Handling: The device can handle continuous drain currents of up to 49A, allowing it to support high power loads.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 5.6 mΩ, which ensures minimal power loss during operation.
4. Fast Switching: The MOSFET is designed for rapid switching, enhancing performance in applications like DC-DC converters and power management circuits.
5. Thermal Performance: It comes in a TO-220 package, enabling effective heat dissipation and facilitating high thermal performance.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for compatibility with standard logic level drive voltages.
These features make the SI7949DP-T1-E3 an excellent choice for applications requiring efficient power switching and management.
Package
Pinout
1. G (Gate): Controls the MOSFET’s on/off state.
2. D (Drain): Connects to the load; where the current flows out.
3. S (Source): Connects to ground or the negative side of the power supply; where current flows in.
The pin layout typically follows this configuration:
- Pin 1: Gate
- Pin 2: Source
- Pin 3: Source
- Pin 4: Drain
- Pin 5: Drain
- Pins 6-8: Other connections for thermal or electrical performance enhancement as per specific applications.
The SI7949DP-T1-E3 is designed for low on-resistance, high-speed switching applications, making it suitable for power management in various electronic devices. Its robust construction allows it to handle high voltages and currents effectively.
Manufacturer
Application
Equivalent
Shipping
Shipping MethodsWe
offer global shipping services through DHL, FedEx, TNT, UPS, or any other forwarder of your choice.
Shipping Fee Reference (DHL/FedEx):
DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.
FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.
UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.
TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.
EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.
Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.
Payments
Payment Methods
The Payment term is 100% Prepaid.
Currently, we only accept the below payment methods:
1. PayPal
2. Credit/ Debit Card
3. Wire Transfer
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