STB60NF06LT4

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STB60NF06LT4

MOSFET N-CH 60V 60A D2PAK

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  • Mfr. Part #STB60NF06LT4
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  • Datasheet
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Specifications

Series STripFET™ II
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 4.5 V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
Power Dissipation (Max) 110W (Tc)
Operating Temperature -65°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number STB60

Overview

Description

The STB60NF06LT4 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification purposes. It is part of the STMicroelectronics' Power MOSFET series. This component is known for its efficiency in handling high-current loads with low on-resistance, making it suitable for various applications such as power management systems, motor drives, and other high-power operations.
Key specifications include:
1. Voltage Rating: The MOSFET can handle a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: It supports a maximum continuous drain current (I_D) of 60A.
3. On-Resistance: It features a low on-state resistance (R_DS(on)) of around 0.014 ohms, minimizing power losses.
4. Package: The device is typically encapsulated in a TO-220 package, offering good thermal performance.
5. Applications: Due to its excellent electrical characteristics, it is commonly used in automotive applications, switching power supplies, and other high-efficiency applications.
The STB60NF06LT4 is valued for its robust performance, reliability, and cost-effectiveness in high-power electronic designs.

Features

The STB60NF06LT4 is a N-channel MOSFET designed for various applications requiring high current handling and efficient switching. Here are its key features:
1. Voltage and Current Ratings: It supports a maximum drain-source voltage (V_DS) of 60V and can handle a continuous drain current (I_D) of up to 60A.
2. Low On-Resistance: The MOSFET features a low R_DS(on), which helps reduce power loss and improve efficiency in power conversion and switching applications.
3. Fast Switching: It provides fast switching capabilities, making it suitable for high-speed operation in both low and high-frequency circuits.
4. Thermal Performance: The device is designed with good thermal performance characteristics, which help in managing heat dissipation effectively during operation.
5. Package Type: It is available in a D2PAK package, offering ease of mounting on PCBs and good thermal characteristics.
6. Applications: Typical applications include power supply circuits, motor drivers, DC-DC converters, and other power management systems.
These features make the STB60NF06LT4 a versatile component for demanding electronic applications requiring efficient and reliable power management.

Package

The STB60NF06LT4 is a MOSFET transistor packaged in a D²PAK (TO-263) format. This type of package is designed for surface mounting and is commonly used in power applications due to its efficient thermal performance and ability to handle high current.

Pinout

The STB60NF06LT4 is a TO-220 package MOSFET manufactured by STMicroelectronics. It is an N-channel MOSFET designed for high-speed switching applications and features low gate charge, low on-resistance, and high avalanche capability.
Pin Count:
- The MOSFET comes in a TO-220 package, which typically has 3 pins.
Pin Functions:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET is turned on or off.
2. Drain (D): This pin is where the current flows out when the MOSFET is in the "on" state. It is connected to the load that the MOSFET is switching.
3. Source (S): This pin is connected to the ground or to the negative side of the input voltage in most circuits. It serves as the return path for the current flowing through the drain when the MOSFET is on.
This MOSFET is commonly used in power supply circuits, motor drivers, and other applications requiring efficient power management.

Manufacturer

The STB60NF06LT4 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. It serves various markets, including automotive, industrial, personal electronics, and communication equipment. The company is known for its innovative solutions in microelectronics and is a major player in the semiconductor industry.

Application

The STB60NF06LT4 is a N-channel MOSFET used in various electronic applications. Its primary use includes power management in DC-DC converters, motor drives, and power supplies. It is suitable for applications requiring efficient switching, such as automotive systems, industrial machinery, and consumer electronics. Additionally, it can be used in battery-operated devices for load switching and power distribution. The MOSFET's low on-resistance and high current handling capabilities make it ideal for high-efficiency power conversion and management.

Equivalent

The STB60NF06LT4 is an N-channel MOSFET. Equivalent products include the IRFZ44N, IRLZ44N, and the IRFZ48N, which are also N-channel MOSFETs with similar voltage and current ratings. These alternatives can be used in similar applications, but it's essential to compare specific parameters like Rds(on), gate charge, and package type to ensure compatibility with your design.

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