STD8N60DM2

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STD8N60DM2

MOSFET N-CH 600V 8A DPAK

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Specifications

Package Tape & Reel (TR),Cut Tape (CT)
Series MDmesh™ DM2
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 8A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 600mOhm @ 4A, 10V
Vgs(th)(Max)@Id 5V @ 100µA
GateCharge(Qg)(Max)@Vgs 13.5 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 375 pF @ 100 V
PowerDissipation(Max) 85W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Overview

Description

The STD8N60DM2 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 8A. With a low on-resistance (R_DS(on)), it ensures efficient power management and minimal heat generation during operation. The device is housed in a DPAK package, which facilitates easy mounting and thermal dissipation.
Key characteristics include fast switching speeds, making it suitable for applications like switch-mode power supplies, motor drives, and various other power management systems. The STD8N60DM2 also includes a built-in body diode, providing reverse current capability, enhancing its versatility in circuit design.
Overall, the STD8N60DM2 is favored for its reliability and performance in demanding environments, making it a popular choice among engineers in the power electronics field.

Features

The STD8N60DM2 is a power MOSFET designed for high-voltage applications. Its key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage environments.

2. Current Rating: It has a continuous drain current (Id) of 8A at a temperature of 25°C, allowing for substantial current handling.
3. On-Resistance: It boasts a low on-resistance (Rds(on)) of approximately 0.6 Ω, which helps minimize power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 2 to 4V, indicating efficient gate drive requirements.
5. Package: Typically offered in a TO-220 package, facilitating easy heat dissipation and PCB mounting.
6. Temperature Range: It operates over a wide temperature range, enhancing reliability in various environments.
These features make the STD8N60DM2 ideal for applications in power supplies, motor drives, and other high-voltage switching applications.

Package

The STD8N60DM2 is packaged in a TO-220 form factor. This package type is designed for efficient thermal performance and ease of mounting on heatsinks, making it suitable for high-power applications.

Pinout

The STD8N60DM2 is a N-channel MOSFET with a pin count of 3, typically arranged in a TO-220 package. The pins serve the following functions:
1. Gate (G) - This pin controls the MOSFET, allowing it to turn on or off based on the voltage applied to it.
2. Drain (D) - The drain pin connects to the load, where current flows out of the MOSFET when it is in the on state.
3. Source (S) - The source pin connects to the ground or the negative side of the circuit.
In summary, the STD8N60DM2 features three pins that facilitate its operation as a power switch in various applications.

Manufacturer

The STD8N60DM2 is manufactured by STMicroelectronics, a multinational electronics and semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor products, including discrete components, integrated circuits, and sensors. The company serves various industries, such as automotive, industrial, consumer, and communication applications. With a strong focus on innovation and sustainability, STMicroelectronics is known for its commitment to developing technology that enhances energy efficiency and performance.

Application

The STD8N60DM2 is a high-voltage N-channel MOSFET used primarily in power electronics applications. Its main areas include switching power supplies, motor control, lighting control, and automotive applications. It is suitable for high-efficiency designs in inverters, converters, and other high-frequency applications due to its fast switching capabilities and low on-resistance.

Equivalent

The STD8N60DM2 is an N-channel MOSFET. Equivalent products include:
1. STP8NK60Z
2. IRF840
3. MTP8N60E
4. FQP8N60C
5. SPT8N60
Always verify specifications such as voltage ratings, current ratings, and on-resistance to ensure compatibility for your specific application.

Shipping

Shipping MethodsWe

offer global shipping services through DHL, FedEx, TNT, UPS, or any other forwarder of your choice.


Shipping Fee Reference (DHL/FedEx):

DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.

FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.

UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.

TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.

EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.

Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.

Payments

Payment Methods

The Payment term is 100% Prepaid.

Currently, we only accept the below payment methods:

1. PayPal

2. Credit/ Debit Card

3. Wire Transfer

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