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STW55NM60ND
MOSFET N-CH 600V 51A TO247-3
- Manufacturer
- Mfr. Part #STW55NM60ND
- Package TO-247
- Datasheet
- In Stock2607
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Specifications
| Package | Tube |
| Series | FDmesh™ II |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 51A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 60mOhm @ 25.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 190 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 5800 pF @ 50 V |
| PowerDissipation(Max) | 350W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
Overview
Description
The device is packaged in a TO-220 format, facilitating heat dissipation, and is designed for easy integration into existing circuits. Its fast switching capabilities enhance the efficiency of power electronics. Overall, the STW55NM60ND is a reliable choice for designers looking to optimize performance in high-voltage applications.
Features
1. Voltage Rating: Rated for a maximum drain-source voltage (VDS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (ID) of 55A, ensuring robust performance in demanding environments.
3. Low On-Resistance: With a maximum on-resistance (RDS(on)) of around 0.07 ohms at VGS of 10V, it provides efficient conduction and reduced power losses.
4. Gate Threshold Voltage: Features a gate threshold voltage (VGS(th)) ranging from 2V to 4V, allowing for efficient switching at low drive voltages.
5. Fast Switching: High-speed switching capabilities minimize losses during operation, making it suitable for applications such as switch-mode power supplies and motor drives.
6. Package Type: Typically available in TO-220 or DPAK packages, which facilitate easy mounting and heat dissipation.
Overall, the STW55NM60ND is well-suited for various industrial and consumer electronics applications requiring reliable performance.
Package
Pinout
1. Gate (G): This pin is used to control the switching of the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal where current enters the MOSFET. It connects to the load in a circuit.
3. Source (S): This terminal is where current exits the MOSFET. It typically connects to ground or the negative side of the power supply.
The STW55NM60ND is designed for high-voltage applications, supporting a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 55A. Its characteristics make it suitable for various applications, including power supplies and motor control circuits.
Manufacturer
Application
Equivalent
1. IRF320 - 55A, 200V N-channel MOSFET.
2. FQP55N60 - 55A, 600V N-channel MOSFET.
3. MTP55N60E - 55A, 600V N-channel MOSFET.
4. BTA55-600V - 55A, 600V N-channel MOSFET.
Always verify specifications such as Rds(on), gate charge, and thermal characteristics for your specific application.
Shipping
Shipping MethodsWe
offer global shipping services through DHL, FedEx, TNT, UPS, or any other forwarder of your choice.
Shipping Fee Reference (DHL/FedEx):
DHL: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 2-5 business days.
FedEx: Shipping cost ranges from $25-$40 (0.5kg), with an estimated delivery time of 3-7 business days.
UPS: Shipping cost ranges from $25-$45 (0.5kg), with an estimated delivery time of 3-7 business days.
TNT: Shipping cost ranges from $25-$65 (0.5kg), with an estimated delivery time of 3-7 business days.
EMS: Shipping cost ranges from $30-$50 (0.5kg), with an estimated delivery time of 7-15 business days.
Registered Air Mail: Shipping cost is $2-$4 (0.1kg), with an estimated delivery time of 5-20 business days.
Payments
Payment Methods
The Payment term is 100% Prepaid.
Currently, we only accept the below payment methods:
1. PayPal
2. Credit/ Debit Card
3. Wire Transfer
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