ZXMN10A08E6TA

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ZXMN10A08E6TA

MOSFET N-CH 100V 1.5A SOT26

  • Manufacturer
  • Mfr. Part #ZXMN10A08E6TA
  • Package
  • Datasheet
  • In Stock3353

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Specifications

Supplier Diodes Incorporated
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 1.5A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 250mOhm @ 3.2A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 7.7 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 405 pF @ 50 V
PowerDissipation(Max) 1.1W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-26

Overview

Description

ZXMN10A08E6TA is a Zetex/Diodes Inc. N-channel enhancement-mode power MOSFET. It's intended for high-voltage, high-current switching in power-supply and motor-drive circuits.
Key points:
- Type: N-channel MOSFET (enhancement mode)
- Voltage/current ratings: VDS around 100 V; ID about 10 A
- RDS(on): very low (on the order of a few milliohms) at a gate drive around 10 V (higher at 4.5 V)
- Gate: logic-level capable
- Package: surface-mount (specific package varies by reel; consult datasheet for exact pinout)
- Features: fast switching, intrinsic body diode, suitable for switching/regulation applications
Typical uses: DC-DC converters, high-side/low-side switches, motor drivers, and other power-switching duties in consumer and industrial electronics.
Note: Always refer to the manufacturer datasheet for exact electrical specs, pinout, thermal characteristics, and recommended operating conditions.

Features

ZXMN10A08E6TA is an N-channel enhancement-mode MOSFET. Key features typical for this device:
- Vds: 100 V; Id: ~10 A (continuous)
- Rds(on): ~0.08 Ω (max ~0.12 Ω)
- Gate: logic-level (Vgs(th) ≈ 2–4 V; fully on around 4.5 V; Vgs max ±20 V)
- Low gate charge for fast switching
- Avalanche-rated with rugged SOA
- Package: surface-mount DPAK/TO-252 style (3-terminal)
- Applications: switching power supplies, DC-DC converters, motor drivers, load switches
Note: exact values depend on datasheet revision; confirm for your lot.

Package

ZXMN10A08E6TA is a surface-mount N-channel MOSFET packaged in DPAK (TO-252-3).

Pinout

ZXMN10A08E6TA is a 3-pin N‑channel MOSFET (plus a metal tab/heatsink that is electrically the drain). The three pins are Gate (control), Drain (load connection, often tied to the tab), and Source (return). Function: an N‑channel enhancement‑mode power MOSFET used for switching and power‑management tasks (e.g., DC–DC converters, load switching, motor/driving stages).

Manufacturer

ZXMN10A08E6TA is a MOSFET originally made by Zetex Semiconductors (a UK-based semiconductor company). Zetex was acquired and is now part of Diodes Incorporated. Diodes Incorporated is a global manufacturer of discrete semiconductor devices, including MOSFETs, diodes, and transistors.

Application

ZXMN10A08E6TA is a 10 A, N-channel enhancement MOSFET. Common applications include:
- Switch elements in DC-DC converters and power supplies
- Low- and high-side motor/actuator driver circuits
- Load switches and protection (reverse polarity, surge) in consumer and automotive electronics
- Power management in battery, solar, and inverter systems
- General high-current switching for compact surface-mount power designs

Equivalent

ZXMN10A08E6TA is an N‑channel MOSFET: roughly VDS 80 V, ID ~10 A, RDS(on) ~0.08–0.1 Ω, in a DPAK/TO‑252 package. Equivalents are other 80 V, ≥10 A N‑MOSFETs in the same package with similar RDS(on). For exact cross‑references, provide the package (DPAK/TO‑252) and target RDS(on)/gate thresholds, or use DigiKey/Mouser cross‑reference tools by VDS, ID and RDS(on).

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